STFI9N60M2 N-Channel MOSFET 600V 5.5A I2PAKFP

STFI9N60M2 N-Channel MOSFET 600V 5.5A I2PAKFP

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High-Performance MDmesh™ II Plus MOSFET for Demanding Power Applications

The STFI9N60M2 from STMicroelectronics represents a breakthrough in power MOSFET technology, combining advanced MDmesh™ II Plus silicon innovation with robust I2PAKFP packaging. This N-channel transistor delivers exceptional performance in high-voltage switching applications while maintaining thermal stability and energy efficiency.

Technical Excellence in Power Management

Engineered for modern power electronics systems, this 600V MOSFET offers a remarkable balance of electrical characteristics. With a maximum RDS(on) of 780mΩ at 3A/10V, it ensures minimal conduction losses while maintaining fast switching capabilities through its 10nC gate charge rating. The device's 4V gate threshold voltage enables precise control in various power conversion scenarios, making it ideal for applications ranging from industrial motor drives to renewable energy systems.

ParameterValue
Drain-Source Voltage600V
Continuous Drain Current5.5A
Max Power Dissipation20W @ TC
Operating Temperature150°C
Advanced Packaging for Thermal Reliability

Housed in the innovative I2PAKFP (TO-281) package, this MOSFET features optimized thermal dissipation characteristics that significantly enhance device longevity. The through-hole mounting configuration provides mechanical stability while maintaining excellent thermal transfer properties. With 320pF input capacitance at 100V, it achieves optimal performance in high-frequency switching applications without compromising reliability.

Key advantages include ±25V gate-source voltage protection, ensuring robust operation in challenging environments. The device's inherent design eliminates the need for complex snubber circuits in most power conversion topologies, simplifying PCB layouts and reducing overall system costs.

Industrial-Grade Performance

As part of STMicroelectronics' MDmesh™ II Plus family, the STFI9N60M2 demonstrates exceptional durability in harsh operating conditions. Its 150°C maximum operating temperature rating allows deployment in high-ambient environments without performance degradation. The transistor's inherent ruggedness makes it particularly suitable for industrial motor control, power supply units, and battery management systems where reliability is paramount.

Whether you're designing next-generation power supplies or upgrading existing systems, this MOSFET offers the perfect combination of electrical performance, thermal management, and packaging innovation. The device's compliance with RoHS standards ensures environmental responsibility while maintaining industrial-grade specifications.

Tags: Power Electronics, Industrial Components, Voltage Regulators, Energy Systems, Electronic Design

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