STFH18N60M2 N-Channel MOSFET 600V 13A TO-220FP | STMicroelectronics MDmesh™ Series
- Brand: STMicroelectronics
- Product Code: STFH18N60M2
- Availability: In Stock
$0.68
- Ex Tax: $0.68
High-Performance STFH18N60M2 N-Channel MOSFET for Demanding Power Applications
The STFH18N60M2 from STMicroelectronics represents a pinnacle of innovation in power semiconductor technology, combining robust performance characteristics with advanced MDmesh™ design. This N-Channel MOSFET delivers exceptional reliability and efficiency for industrial, automotive, and high-voltage applications, setting new benchmarks for modern power electronics systems.
Technical Excellence in Power Management
Engineered for high-voltage environments, this TO-220FP packaged device boasts a 600V drain-source voltage rating coupled with a continuous drain current capacity of 13A at 25°C. The device's optimized RDS(on) of 280mΩ at 6.5A and 10V gate-source voltage ensures minimal conduction losses, translating to enhanced system efficiency and thermal performance. Its advanced gate charge characteristics (21.5nC @ 10V) enable fast switching capabilities while maintaining excellent energy efficiency.
| Key Specifications | Value |
|---|---|
| Max Voltage | 600V |
| Continuous Current | 13A |
| On-Resistance | 280mΩ |
| Operating Temp | -55°C to 150°C |
MDmesh™ Technology Advantages
STMicroelectronics' proprietary MDmesh™ technology forms the foundation of this device's superior performance. The patented design minimizes conduction losses while maintaining exceptional avalanche energy ratings. This technological advancement enables engineers to create compact power solutions with reduced heatsinking requirements, making it ideal for space-constrained applications requiring high power density.
Industrial and Automotive Applications
This versatile power MOSFET excels in a wide range of applications including motor drives, power supplies, battery management systems, and automotive electronics. Its rugged construction and ±25V gate-source voltage tolerance provide exceptional reliability in harsh environments. The through-hole TO-220FP package offers excellent thermal dissipation characteristics, ensuring stable operation even under demanding conditions.
Design Flexibility and Reliability
With a 4V gate threshold voltage at 250µA and optimized input capacitance (791pF @ 100V), the STFH18N60M2 offers exceptional design flexibility. The device's inherent robustness against thermal runaway, combined with its 25W power dissipation capability (at Tc), makes it suitable for both continuous and intermittent high-power operations. Its automotive-qualified construction meets stringent industry reliability standards.
Comprehensive Support and Availability
As part of STMicroelectronics' extensive MDmesh™ product family, this MOSFET benefits from comprehensive technical documentation, application engineering support, and global supply chain reliability. The device's active status and standard tube packaging ensure long-term availability for production environments requiring consistent component sourcing.
Tags: Power Electronics, High Voltage MOSFET, Industrial Components, Semiconductor Devices, Electrical Engineering