STF9NM60N N-Channel MOSFET 600V 6.5A TO-220FP | STM
- Brand: STMicroelectronics
- Product Code: STF9NM60N
- Availability: In Stock
$1.00
- Ex Tax: $1.00
STF9NM60N N-Channel MOSFET: High-Performance Power Management for Demanding Applications
In the ever-evolving landscape of power electronics, STMicroelectronics continues to set benchmarks with its STF9NM60N N-Channel MOSFET, a high-performance transistor engineered for demanding applications requiring robust voltage handling and efficient power management. This device combines advanced MDmesh™ II technology with a TO-220FP package to deliver exceptional thermal performance, reliability, and versatility across industrial, automotive, and consumer electronics sectors.
At the heart of the STF9NM60N lies its impressive voltage rating of 600V, making it ideal for high-voltage power conversion systems. With a continuous drain current of 6.5A at 25°C, this N-Channel MOSFET delivers reliable performance in applications such as power supplies, motor drives, and industrial automation equipment. Its low on-state resistance (Rds(on)) of 745mΩ at 3.25A and 10V gate-source voltage minimizes conduction losses, enhancing overall system efficiency—a critical factor in energy-conscious designs.
Key Technical Advantages
Coupled with a gate charge (Qg) of 17.4nC at 10V, the device ensures fast switching speeds without compromising power integrity. The STF9NM60N's ±25V gate-source voltage rating provides robust protection against voltage spikes, while its maximum operating temperature of 150°C ensures stability in thermally demanding environments. These specifications make it particularly suitable for:
- Power factor correction (PFC) circuits
- DC-DC converters
- Uninterruptible power supplies (UPS)
- Industrial motor control systems
Thermal Performance & Packaging
The TO-220FP package not only provides a robust mechanical structure but also facilitates efficient heat dissipation through its through-hole mounting design. This makes the STF9NM60N suitable for environments where thermal management is crucial, such as in power adapters and battery charging systems. The package's compact footprint allows integration into space-constrained designs while maintaining exceptional power dissipation capabilities.
| Parameter | Value |
|---|---|
| Drain-Source Voltage (Vdss) | 600V |
| Continuous Drain Current (Id) | 6.5A |
| Rds(on) @ 10V Vgs | 745mΩ |
| Gate Charge (Qg) | 17.4nC |
| Operating Temperature | 150°C |
Why Choose STF9NM60N?
Engineers and designers seeking a reliable power transistor solution will find the STF9NM60N's specifications particularly advantageous. By integrating STMicroelectronics' MDmesh™ II technology, this MOSFET achieves a balance between high-voltage capability and low conduction losses, making it a versatile choice for modern power systems. Whether developing industrial machinery, renewable energy systems, or consumer electronics, this device offers the reliability and performance needed to meet evolving industry standards.
With its comprehensive protection features—including thermal shutdown and avalanche energy ratings—the STF9NM60N ensures long-term durability in challenging operating conditions. Its compliance with RoHS and REACH standards further underscores STMicroelectronics' commitment to environmental responsibility without compromising performance metrics.
Tags: Power MOSFET, N-Channel Transistor, High Voltage FET, TO-220FP Package, STMicroelectronics Semiconductor