STF8NM50N MOSFET N-Channel 500V 5A TO220FP
- Brand: STMicroelectronics
- Product Code: STF8NM50N
- Availability: In Stock
$0.50
- Ex Tax: $0.50
STF8NM50N N-Channel MOSFET: High-Performance Power Solution for Demanding Applications
In the ever-evolving landscape of power electronics, STMicroelectronics continues to set industry benchmarks with its MDmesh™ II series. The STF8NM50N N-Channel MOSFET exemplifies cutting-edge semiconductor technology, delivering exceptional performance in high-voltage applications. This 500V, 5A power MOSFET combines advanced silicon design with robust TO-220FP packaging, making it ideal for industrial motor drives, power supplies, and automotive systems requiring reliable switching performance.
Technical Excellence in Power Management
The STF8NM50N leverages STMicroelectronics' proprietary MDmesh technology to achieve an optimal balance between conduction and switching losses. With a maximum Rds(on) of 790mΩ at 2.5A and 10V gate drive, this device minimizes power dissipation while maintaining exceptional thermal stability. The 500V breakdown voltage rating enables its use in high-voltage industrial equipment, while the 5A continuous drain current ensures compatibility with demanding load conditions.
Engineered for efficiency, this N-channel MOSFET features a gate charge (Qg) of 14nC at 10V, enabling fast switching transitions that reduce electromagnetic interference (EMI) and improve system efficiency. The ±25V gate voltage rating provides enhanced operational flexibility, while the 364pF input capacitance at 50V ensures stable performance in high-frequency applications.
Parameter | Value |
---|---|
Drain-Source Voltage (Vdss) | 500V |
Continuous Drain Current (Id) | 5A @ 25°C |
Rds(on) Max | 790mΩ @ 2.5A, 10V |
Gate Charge (Qg) | 14nC @ 10V |
Operating Temperature | -55°C to 150°C |
Robust Design for Real-World Applications
The STF8NM50N's through-hole TO-220FP package offers superior thermal dissipation characteristics, with a maximum power dissipation rating of 20W (Tc). This enables reliable operation in harsh environments where thermal management is critical. The device's 4V gate threshold voltage (at 250µA) ensures compatibility with standard logic drivers while maintaining excellent noise immunity.
Designed for modern power conversion systems, this MOSFET excels in applications such as:
- Switch-mode power supplies (SMPS)
- Motor control inverters
- Industrial automation equipment
- Consumer electronics power stages
- Automotive charging systems
The device's active status in STMicroelectronics' product portfolio ensures long-term availability and ongoing technical support, making it a dependable choice for new design projects.
Advanced Packaging and Reliability
The TO-220-3 full-pack package combines mechanical durability with excellent electrical performance. This through-hole mounting solution provides enhanced vibration resistance compared to surface-mount alternatives, while the package's thermal design enables efficient heat transfer to heatsinks. The device's operating temperature range of -55°C to 150°C ensures reliable performance across industrial and automotive environments.
With its 10V drive voltage compatibility and optimized switching characteristics, the STF8NM50N delivers consistent performance in both continuous conduction and pulsed operation modes. The device's ±25V gate voltage rating provides additional design margin for voltage spikes and transient conditions.
Design Considerations and Implementation
When incorporating the STF8NM50N into power circuits, designers should consider the following best practices:
- Implement proper gate drive circuitry with adequate current sourcing/sinking capability
- Use thermal vias and heatsinking solutions to maintain junction temperatures below 150°C
- Implement snubber circuits for inductive load switching applications
- Ensure proper PCB layout with minimized loop areas for high-frequency operation
The device's tube packaging format (2000 pieces per tube) facilitates automated handling and storage while maintaining component integrity during manufacturing processes.
Conclusion: Elevating Power Electronics Performance
The STF8NM50N represents STMicroelectronics' commitment to advancing power semiconductor technology. By combining high voltage capability with optimized switching characteristics in a robust package, this N-channel MOSFET provides engineers with a versatile solution for next-generation power systems. Whether designing industrial motor drives, renewable energy inverters, or high-reliability automotive electronics, the STF8NM50N offers the performance, reliability, and ease of implementation required for modern power applications.
Tags: Power MOSFETs, N-Channel Transistors, High Voltage FETs, Industrial Electronics, Automotive Components