STF5NK100Z N-Channel MOSFET | 1000V 3.5A TO-220FP Power Transistor

STF5NK100Z N-Channel MOSFET | 1000V 3.5A TO-220FP Power Transistor

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Revolutionizing Power Management with STF5NK100Z N-Channel MOSFET

In the ever-evolving landscape of power electronics, STMicroelectronics continues to set benchmarks with its SuperMESH3™ technology. The STF5NK100Z N-Channel MOSFET represents a paradigm shift in high-voltage power transistor performance, combining exceptional electrical characteristics with robust thermal management. This 1000V, 3.5A power transistor packaged in a TO-220FP configuration delivers unmatched efficiency for demanding industrial and automotive applications.

Technical Excellence in Power Switching

At the heart of this device lies STMicroelectronics' advanced PowerMESH™ layout, which achieves an optimal balance between on-state resistance and switching performance. With its 1000V drain-source voltage rating and 3.5A continuous drain current capability, the STF5NK100Z excels in high-voltage switching applications requiring both reliability and efficiency. The 3.7Ω Rds(on) measured at 1.75A and 10V gate-source voltage demonstrates its superior conduction characteristics, while the 59nC gate charge ensures fast switching transitions.

ParameterValue
Breakdown Voltage1000V
Continuous Drain Current3.5A
On-State Resistance3.7Ω
Gate Charge59nC
Operating Temperature-55°C to 150°C

This N-channel MOSFET leverages ST's proprietary technology to deliver exceptional avalanche energy ratings and high dv/dt capability. The TO-220FP package provides excellent thermal dissipation, maintaining 30W power dissipation at 25°C case temperature. Its ±30V gate-source voltage rating ensures robustness against voltage spikes, while the 1154pF input capacitance optimizes high-frequency performance.

Industrial Applications and System Benefits

Engineers designing power supplies, motor drives, and battery management systems will find the STF5NK100Z particularly advantageous. Its high-voltage capability makes it ideal for solar inverters, electric vehicle charging systems, and industrial automation equipment. The device's low on-state resistance significantly reduces conduction losses, improving overall system efficiency while minimizing thermal management requirements.

The SuperMESH3™ technology's inherent advantages translate to tangible benefits in real-world applications. Designers can achieve higher switching frequencies while maintaining efficiency, enabling smaller magnetic components and reducing overall system size. The device's thermal stability across its operating temperature range (-55°C to 150°C) ensures consistent performance in harsh environments.

Design Flexibility and Reliability

With its 4.5V gate-source threshold voltage, the STF5NK100Z offers compatibility with standard gate drive circuits while maintaining excellent switching characteristics. The through-hole TO-220-3 Full Pack mounting option provides mechanical stability and simplified heat sinking solutions for various PCB layouts.

This power transistor's design philosophy emphasizes long-term reliability and operational safety. The device's construction meets stringent industrial standards, ensuring consistent performance across diverse operating conditions. Its robustness against thermal runaway, combined with excellent short-circuit withstand capability, makes it a preferred choice for mission-critical applications.

Future-Proof Power Solution

As power systems evolve towards higher efficiency and compact designs, the STF5NK100Z positions itself as a future-proof solution. Its compliance with modern environmental regulations, coupled with STMicroelectronics' commitment to product longevity, ensures sustained performance in next-generation power electronics. Whether in renewable energy systems, smart grid applications, or advanced industrial automation, this N-channel MOSFET provides the foundation for reliable and efficient power conversion.

Tags: Power Electronics, Voltage Regulation, High-Voltage Switching, Industrial Automation, Energy Efficiency

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