STMicroelectronics STF4N80K5 N-Channel MOSFET 800V 3A TO-220FP

Revolutionizing Power Management with STMicroelectronics STF4N80K5 SuperMESH5™ MOSFET

In the realm of power electronics, the STF4N80K5 N-Channel MOSFET from STMicroelectronics emerges as a game-changer for engineers seeking reliability and efficiency in high-voltage applications. Part of the advanced SuperMESH5™ family, this 800V, 3A transistor packaged in TO-220FP format combines cutting-edge silicon technology with robust thermal performance, making it ideal for demanding industrial and consumer electronics systems.

Key Specifications at a Glance

Engineered with ST's fifth-generation SuperMESH technology, this power MOSFET delivers exceptional performance through its optimized cell structure that minimizes on-resistance while maintaining excellent switching characteristics. The 800V breakdown voltage capability makes it particularly suitable for off-line power supplies and motor control applications where high voltage handling is critical.

Designers will appreciate the device's ±30V gate voltage rating, providing greater flexibility in gate drive circuitry while maintaining stability under transient conditions. The 5V gate threshold voltage ensures compatibility with standard logic-level controllers, simplifying integration into existing systems. With a maximum power dissipation of 20W (Tc), the TO-220FP package offers excellent thermal management through its through-hole mounting configuration.

Technical Excellence in Power Semiconductor Design

The STF4N80K5 distinguishes itself through its exceptional parameter balance. Its 175 pF input capacitance at 100V Vds enables fast switching performance while maintaining stability in high-frequency applications. The device's 10.5nC gate charge specification contributes to reduced switching losses, making it particularly effective in energy-efficient power supplies and lighting ballast systems.

Engineers working with this N-channel MOSFET benefit from its comprehensive specification coverage: from the 100µA gate threshold voltage measurement condition to the 1.5A test current for Rds(on) measurement, ensuring reliable performance metrics across operating conditions. The ±30V gate-source voltage rating provides robustness against voltage spikes, enhancing system reliability in challenging environments.

This transistor's thermal performance is particularly noteworthy - the TO-220 Full Pack case design allows for effective heat dissipation when mounted on standard heat sinks. With its -55°C to 150°C operating temperature range, it maintains performance stability in both extreme industrial environments and consumer applications.

Applications Across Industries

The STF4N80K5 finds applications in a wide range of power systems including:

• Switching power supplies for industrial equipment
• Motor drives and control systems
• Lighting ballasts and LED drivers
• Uninterruptible power supplies (UPS)
• Renewable energy systems (solar inverters, battery chargers)

Its combination of high voltage capability, reasonable on-resistance, and compact packaging makes it particularly suitable for space-constrained applications requiring reliable power handling. The device's through-hole mounting configuration offers mechanical stability while maintaining compatibility with standard PCB assembly processes.

Why Choose the STF4N80K5?

As part of STMicroelectronics' SuperMESH5™ family, this MOSFET represents the culmination of years of power semiconductor innovation. The device's specifications have been optimized for modern power conversion systems requiring both high efficiency and compact form factors. Its 800V rating provides a safety margin for applications dealing with voltage transients, while the 3A current capability suits a wide range of mid-power applications.

When compared to similar devices in its class, the STF4N80K5 stands out through its balanced specification set that avoids trade-off extremes. The 2.5Ω maximum on-resistance at 1.5A and 10V gate drive offers a practical compromise between conduction losses and cost, while maintaining fast switching characteristics through its optimized gate charge parameters.

Tags: Power MOSFET, High Voltage Transistor, TO-220FP, N-Channel, SuperMESH5 Technology