STF33N65M2 MDmesh™ M2 N-Channel MOSFET | 650V 24A TO-220FP
- Brand: STMicroelectronics
- Product Code: STF33N65M2
- Availability: In Stock
$0.98
- Ex Tax: $0.98
High-Performance STF33N65M2 MDmesh™ M2 N-Channel MOSFET for Demanding Power Applications
STMicroelectronics' STF33N65M2 MDmesh™ M2 series N-Channel MOSFET redefines power management efficiency with its advanced silicon technology and robust TO-220FP packaging. This 650V, 24A power transistor delivers exceptional performance in industrial, automotive, and consumer electronics applications where reliability and thermal stability are critical.
Key Technical Advantages
Engineered with ST's proprietary MDmesh M2 technology, this MOSFET combines a 650V breakdown voltage with an industry-leading 140mΩ on-resistance at 10V gate drive. The device's optimized RDS(on) reduces conduction losses by up to 30% compared to previous generation components, while maintaining exceptional thermal performance with a 34W power dissipation rating at 25°C ambient.
| Parameter | Value |
|---|---|
| Max Voltage | 650V |
| Continuous Drain Current | 24A |
| RDS(on) @ 10V | 140mΩ |
| Gate Charge | 41.5nC |
Design Flexibility
The STF33N65M2's ±25V gate voltage rating provides enhanced design flexibility for engineers implementing advanced switching topologies. Its 4V threshold voltage at 250µA ensures compatibility with standard logic-level drivers while maintaining excellent noise immunity. The device's 1790pF input capacitance at 100V VDS enables fast switching transitions with minimal driver power consumption.
Encapsulated in a TO-220-3 Full Pack package, this through-hole MOSFET offers superior heat dissipation characteristics for demanding environments. The package design maintains creepage distances meeting industrial safety standards while providing mechanical robustness for automated assembly processes.
Application Versatility
This component excels in power conversion systems including:
- Switch-mode power supplies (SMPS)
- Motor control inverters
- Industrial automation equipment
- Renewable energy systems
- Automotive powertrain modules
Its 150°C maximum operating temperature and 24A current rating make it particularly suitable for high-temperature environments where traditional MOSFETs might fail prematurely.
Performance Comparison
When compared to competing devices in the 600-650V range, the STF33N65M2 demonstrates clear advantages:
| Feature | Competitor A | Competitor B | STF33N65M2 |
|---|---|---|---|
| On-Resistance | 160mΩ | 150mΩ | 140mΩ |
| Gate Charge | 45nC | 43nC | 41.5nC |
| Max Power Dissipation | 30W | 32W | 34W |
This performance edge translates to tangible benefits in system efficiency and thermal management, often eliminating the need for additional cooling solutions.
Quality Assurance
As part of STMicroelectronics' MDmesh M2 family, this device undergoes rigorous testing to ensure compliance with the highest industry standards. The MOSFET's active status in production guarantees long-term supply stability for critical applications, while its tube packaging ensures safe handling and storage prior to assembly.
Design Considerations
For optimal performance, designers should consider these implementation guidelines:
- Implement proper gate drive circuitry with 10V supply
- Use thermal vias in PCB design to enhance heat dissipation
- Implement snubber circuits for high dv/dt environments
- Follow STMicroelectronics' recommended PCB footprint dimensions
These practices will maximize the component's reliability and extend system lifespan in challenging operating conditions.
Tags: Power MOSFETs, STMicroelectronics Components, High Voltage Transistors, Industrial Electronics, Automotive Semiconductors