STF2LN60K3 N-Channel MOSFET - 600V 2A Power Transistor
- Brand: STMicroelectronics
- Product Code: STF2LN60K3
- Availability: In Stock
$0.20
- Ex Tax: $0.20
Revolutionizing Power Efficiency with the STF2LN60K3 N-Channel MOSFET
In the ever-evolving landscape of power electronics, STMicroelectronics continues to set industry benchmarks with its SuperMESH3™ technology. The STF2LN60K3 N-Channel MOSFET stands as a testament to this innovation, offering engineers a robust solution for demanding applications requiring high voltage handling and precise current control. This advanced power transistor combines cutting-edge semiconductor design with proven reliability, making it an ideal choice for modern power conversion systems.
Technical Excellence in Power Management
Engineered for superior performance, the STF2LN60K3 delivers exceptional specifications that meet the rigorous demands of contemporary electronics. With a 600V drain-source voltage rating and 2A continuous drain current capability, this MOSFET excels in high-voltage switching applications. The device's 4.5Ω maximum Rds(on) at 1A and 10V gate drive ensures minimal conduction losses, while its 12nC gate charge characteristic enables fast switching transitions.
| Parameter | Value |
|---|---|
| Drain-Source Voltage | 600V |
| Continuous Drain Current | 2A (Tc) |
| Rds(on) Max | 4.5Ω @ 1A, 10V |
| Gate Charge | 12nC @ 10V |
| Operating Temperature | 150°C (TJ) |
Advanced Design for Demanding Applications
The STF2LN60K3 incorporates ST's third-generation SuperMESH™ technology, which optimizes the trade-off between conduction and switching losses. This breakthrough design features a 4.5V gate threshold voltage with 50µA reference current, ensuring stable operation across various temperature ranges. The device's ±30V gate voltage rating provides enhanced protection against voltage spikes, while its 235pF input capacitance at 50V enables efficient high-frequency operation.
With a TO-220FP package offering excellent thermal dissipation characteristics, this MOSFET supports 20W power dissipation at the case temperature. The through-hole mounting configuration simplifies PCB integration while maintaining mechanical stability in industrial environments. The device's active status and tube packaging ensure long-term supply chain reliability for production applications.
Optimized for Real-World Performance
Engineers will appreciate the STF2LN60K3's balanced performance profile that addresses multiple design challenges. Its 10V drive voltage compatibility aligns with standard gate driver ICs, eliminating the need for specialized high-voltage drivers. The device's inherent robustness against thermal runaway, combined with its 150°C maximum operating temperature, makes it suitable for harsh industrial environments.
This MOSFET finds ideal applications in power supplies, motor control systems, lighting ballasts, and industrial automation equipment. Its combination of high voltage capability and manageable current handling makes it particularly well-suited for bridge configurations and high-side switching applications where reliability is paramount.
Tags: Power Electronics, Semiconductor Components, Industrial Automation, Voltage Regulators, Power Supplies