STF28N60DM2 High-Voltage N-Channel MOSFET | STMicroelectronics MDmesh™ DM2 Series
- Brand: STMicroelectronics
- Product Code: STF28N60DM2
- Availability: In Stock
$1.50
- Ex Tax: $1.50
STF28N60DM2: Powering High-Performance Electronic Systems
Engineered for demanding power electronics applications, the STF28N60DM2 N-Channel MOSFET from STMicroelectronics represents the cutting edge of semiconductor technology. Part of the renowned MDmesh™ DM2 series, this 600V MOSFET combines exceptional electrical performance with robust thermal management capabilities, making it ideal for modern power conversion systems requiring both efficiency and reliability.
Advanced MOSFET Architecture
At the heart of this device lies STMicroelectronics' proprietary MDmesh™ technology, which optimizes the balance between conduction and switching losses. With a maximum drain-source voltage rating of 600V and continuous drain current capacity of 21A at 25°C, the STF28N60DM2 delivers exceptional performance in high-voltage applications. Its 160mΩ on-resistance (measured at 10.5A and 10V gate-source voltage) ensures minimal power loss during operation, while the ±25V gate-source voltage rating provides enhanced protection against voltage spikes.
| Parameter | Value |
|---|---|
| Max Vds | 600V |
| On-Resistance | 160mΩ |
| Gate Charge | 34nC |
| Operating Temperature | -55°C to 150°C |
Optimized for Modern Power Systems
This TO-220FP packaged MOSFET features through-hole mounting for secure installation in industrial equipment and power supply units. The device's 30W power dissipation rating (at case temperature) enables reliable operation in high-stress environments, while its 1500pF input capacitance (measured at 100V drain-source voltage) ensures stable performance in high-frequency switching applications. The 5V gate threshold voltage (at 250µA) facilitates compatibility with standard logic-level control circuits.
Designed for applications such as motor drives, power factor correction circuits, and industrial automation systems, the STF28N60DM2 demonstrates STMicroelectronics' commitment to innovation in power semiconductor technology. Its advanced silicon design minimizes switching losses while maintaining excellent thermal stability, resulting in improved system efficiency and reduced operating temperatures.
Technical Excellence in Power Management
The device's comprehensive feature set includes advanced gate oxide technology for enhanced reliability, optimized package design for improved thermal dissipation, and robust short-circuit protection characteristics. These features make it particularly suitable for use in solar inverters, uninterruptible power supplies (UPS), and electric vehicle charging systems where long-term reliability is critical.
Tags: Power Electronics, High-Voltage MOSFET, Industrial Automation, Energy Efficiency, STMicroelectronics