STF26NM60N N-Channel MOSFET 600V 20A TO-220FP
- Brand: STMicroelectronics
- Product Code: STF26NM60N
- Availability: In Stock
$0.64
- Ex Tax: $0.64
STF26NM60N: High-Performance N-Channel MOSFET for Demanding Applications
STMicroelectronics' STF26NM60N is a cutting-edge N-Channel MOSFET designed for high-voltage applications requiring exceptional reliability and efficiency. This advanced component combines robust technical specifications with industry-proven durability, making it ideal for power electronics engineers seeking optimal performance in switching applications. Built on STM's MDmesh™ II technology, this device delivers superior thermal stability while maintaining minimal conduction losses.
Key Technical Advantages
The STF26NM60N specification sheet reveals impressive capabilities: 600V drain-source voltage rating enables operation in high-voltage circuits, while its 20A continuous drain current ensures reliable power delivery. The device's 165mΩ maximum RDS(on) at 10A/10V gate drive significantly reduces conduction losses, enhancing system efficiency. With ±30V gate voltage tolerance and 60nC gate charge, this MOSFET offers excellent switching performance while maintaining robust protection against voltage spikes.
Engineered for thermal resilience, the STF26NM60N features a TO-220FP package that facilitates efficient heat dissipation. Its 150°C maximum operating temperature rating ensures stable performance in demanding environments. The device's 4V gate threshold voltage (at 250µA) enables precise control in various switching configurations, while its 1800pF input capacitance optimizes high-frequency operation.
Parameter | Value |
---|---|
Max Voltage | 600V |
Continuous Current | 20A |
RDS(on) Max | 165mΩ @10A/10V |
Gate Charge | 60nC @10V |
Operating Temp | 150°C |
Applications and Design Flexibility
This versatile N-Channel MOSFET excels in diverse applications including industrial motor drives, power supplies, and automotive systems. Its through-hole TO-220-3 Full Pack configuration simplifies PCB mounting while ensuring mechanical stability. The device's 35W power dissipation rating allows operation in high-current scenarios without compromising longevity. Designers appreciate the component's compatibility with standard gate drivers and its inherent protection against thermal overstress.
The STF26NM60N's MDmesh™ II technology represents STM's commitment to power semiconductor innovation. This advanced fabrication process minimizes on-state resistance while maintaining exceptional avalanche energy ratings. The device's active status in production assures long-term availability for critical applications. Whether implementing hard-switching topologies or resonant converters, engineers benefit from its predictable performance characteristics.
Quality and Reliability
As part of STMicroelectronics' extensive power management portfolio, the STF26NM60N undergoes rigorous quality testing. The component's ±30V gate voltage protection provides design margin against transient conditions. With 250µA gate threshold current at 4V, it offers precise control in both digital and analog gate drive circuits. The device's 1800pF input capacitance measurement at 50V ensures compatibility with high-speed switching applications.
Available in tube packaging, this component maintains its integrity during storage and handling. The 310,500-unit inventory availability ensures production continuity for volume manufacturers. The TO-220FP package combines mechanical robustness with excellent thermal conductivity, making it suitable for both automated and manual assembly processes.
Tags: Power Management, High Voltage MOSFET, Industrial Electronics, Through Hole Components