STMicroelectronics STF22NM60N MDmesh™ II Series N-Channel MOSFET 600V 16A TO-220FP
- Brand: STMicroelectronics
- Product Code: STF22NM60N
- Availability: In Stock
$0.48
- Ex Tax: $0.48
STF22NM60N: High-Performance N-Channel MOSFET for Demanding Power Applications
STMicroelectronics' STF22NM60N is a cutting-edge N-channel MOSFET designed for high-efficiency power management systems. Part of the MDmesh™ II series, this device combines advanced silicon technology with robust packaging to deliver exceptional performance in industrial, automotive, and consumer electronics applications. With a 600V rating and 16A continuous drain current capability, this MOSFET excels in high-power switching environments where reliability and thermal stability are critical.
Engineered for modern power conversion systems, the STF22NM60N features a remarkably low RDS(on) of 220mΩ at VGS = 10V, minimizing conduction losses while maintaining fast switching characteristics. Its optimized gate charge (Qg) of 44nC enables efficient operation in high-frequency circuits, making it ideal for applications like switched-mode power supplies (SMPS), motor drives, and solar inverters. The device's ±30V gate voltage rating provides enhanced robustness against voltage transients, ensuring long-term reliability in demanding environments.
Key Technical Specifications
| Parameter | Value |
| Drain-Source Voltage (VDSS) | 600V |
| Continuous Drain Current (ID) | 16A @ 25°C |
| RDS(on) @ ID=8A | 220mΩ @ 10V VGS |
| Gate Charge (Qg) | 44nC @ 10V VGS |
| Operating Temperature | -55°C to 150°C |
Encapsulated in a TO-220FP package, the STF22NM60N offers excellent thermal dissipation through its through-hole mounting configuration. The device's 1300pF input capacitance at 50V VDS ensures stable operation in high-voltage circuits while maintaining compatibility with standard gate drivers. With a maximum power dissipation of 30W (TC), this MOSFET can handle substantial power loads without requiring complex cooling solutions.
As part of STMicroelectronics' MDmesh™ II portfolio, the STF22NM60N incorporates advanced processing techniques that reduce parasitic inductance and improve avalanche energy ratings. This makes it particularly suitable for applications requiring high-energy pulse handling, such as electric vehicle charging systems and industrial motor control. The device's 4V gate threshold voltage (VGS(th)) ensures compatibility with standard 5V and 10V gate drive circuits while maintaining excellent switching performance.
Tags: Power Electronics, High Voltage, MOSFET, STMicroelectronics, TO-220 Package