STF18N65M2 MDmesh™ M2 N-Channel MOSFET | 650V 12A TO-220FP
- Brand: STMicroelectronics
- Product Code: STF18N65M2
- Availability: In Stock
$0.45
- Ex Tax: $0.45
Revolutionizing Power Management: STF18N65M2 MDmesh™ M2 N-Channel MOSFET
In the ever-evolving landscape of power electronics, STMicroelectronics continues to set benchmarks with its MDmesh™ M2 series. The STF18N65M2 N-channel MOSFET stands as a testament to innovation, delivering exceptional performance for high-voltage applications. With its robust 650V rating and optimized on-resistance, this device redefines efficiency and reliability in power systems.
Technical Excellence in Power Discrete Design
Engineered for demanding environments, the STF18N65M2 combines advanced silicon technology with a TO-220FP package that ensures excellent thermal management. This N-channel power transistor achieves a remarkable 330mΩ maximum Rds(on) at 6A and 10V gate charge, minimizing conduction losses while maintaining fast switching capabilities. The device's 20nC gate charge and 770pF input capacitance enable rapid transitions, making it ideal for high-frequency operations.
Key Performance Specifications:
| Parameter | Value |
|---|---|
| Max Voltage | 650V |
| Continuous Drain Current | 12A (Tc) |
| On-Resistance | 330mΩ @ 6A, 10V |
| Gate Charge | 20nC @ 10V |
| Operating Temperature | -55°C to 150°C (TJ) |
Optimized for Real-World Applications
From industrial motor drives to renewable energy systems, the STF18N65M2 demonstrates unparalleled versatility. Its ±25V gate voltage tolerance and 4V threshold voltage (at 250µA) provide exceptional control stability across varying operating conditions. The device's through-hole TO-220-3 Full Pack configuration combines mechanical durability with efficient heat dissipation, making it particularly suited for:
- Switching power supplies
- Electric vehicle charging systems
- Industrial automation equipment
- High-voltage motor controllers
The MDmesh™ M2 technology breakthroughs enable designers to create compact, energy-efficient systems without compromising on performance. With a maximum power dissipation of 25W (Tc), this MOSFET maintains reliable operation even in harsh thermal environments.
Design Advantages Over Traditional Solutions
Compared to conventional high-voltage MOSFETs, the STF18N65M2 offers significant improvements in three critical areas:
- Energy Efficiency: Reduced on-resistance minimizes conduction losses by up to 20% compared to previous generation devices
- System Reliability: Advanced packaging technology enhances thermal cycling resistance, extending operational lifespan
- Design Flexibility: The 10V gate drive compatibility simplifies controller interface while maintaining optimal performance
These advantages translate directly into real-world benefits: reduced system cooling requirements, smaller heatsink footprints, and lower overall operating temperatures that contribute to extended equipment longevity.
Tags: Power Transistor, 650V MOSFET, TO-220 Package, N-Channel, High Voltage