STMicroelectronics STF18N60M2 MDmesh™ II Plus N-Channel MOSFET (600V, 13A, TO-220FP)
- Brand: STMicroelectronics
- Product Code: STF18N60M2
- Availability: In Stock
$0.38
- Ex Tax: $0.38
Revolutionizing Power Management: STMicroelectronics STF18N60M2 MDmesh™ II Plus MOSFET
In the ever-evolving landscape of power electronics, STMicroelectronics continues to set benchmarks with its MDmesh™ II Plus series. The STF18N60M2 N-channel MOSFET exemplifies cutting-edge engineering, combining robust performance with exceptional efficiency for demanding applications. This 600V, 13A power transistor in TO-220FP packaging represents the perfect synergy between advanced silicon technology and practical design considerations, making it an ideal choice for modern power conversion systems.
Technical Excellence Under the Hood
Built on ST's proprietary MDmesh™ technology, this MOSFET delivers remarkable electrical characteristics that address multiple critical requirements in power management. With a maximum drain-source voltage rating of 600V and continuous drain current capability of 13A at 25°C, it maintains stable operation under challenging conditions. The device's 280mΩ maximum RDS(on) at 6.5A and 10V gate-source voltage ensures minimal conduction losses, while its ±25V gate voltage tolerance provides enhanced reliability in switching applications.
The STF18N60M2 distinguishes itself through optimized switching performance, featuring a maximum gate charge of 21.5nC at 10V VGS. This characteristic enables rapid transitions while maintaining thermal stability, crucial for high-frequency operations in industrial and consumer electronics. The device's 791pF input capacitance at 100V VDS further contributes to its suitability for modern power supply designs requiring precise control and minimal parasitic effects.
| Parameter | Value |
|---|---|
| Max VDS | 600V |
| Max ID | 13A @ 25°C |
| RDS(on) | 280mΩ @ 6.5A, 10V |
| Gate Charge | 21.5nC @ 10V |
| Operating Temp | -55°C to 150°C |
Design Versatility and Application Range
Engineered for diverse applications, the STF18N60M2 excels in various power conversion scenarios. Its through-hole TO-220FP packaging facilitates efficient heat dissipation while maintaining mechanical robustness, making it suitable for:
- Switching power supplies (SMPS)
- Motor control systems
- Lighting ballasts
- Industrial automation equipment
- Home appliance power stages
The device's 4V maximum threshold voltage at 250µA ensures compatibility with standard logic circuits while maintaining noise immunity. Its 25W power dissipation rating at case temperature enables reliable operation in thermally constrained environments, particularly when paired with appropriate heatsinking solutions.
Quality and Reliability Assurance
As part of STMicroelectronics' MDmesh™ II Plus portfolio, the STF18N60M2 undergoes rigorous qualification processes to ensure long-term reliability. The active status designation confirms its ongoing production availability, providing design engineers with confidence for long-term projects. The device's operating temperature range from -55°C to 150°C makes it suitable for both industrial and automotive applications where environmental extremes are common.
Manufacturers benefit from the device's tube packaging format, which simplifies handling and integration into automated assembly processes. The TO-220-3 full pack configuration maintains backward compatibility with existing infrastructure while delivering enhanced thermal performance compared to traditional packaging variants.
Performance Advantages
When compared to alternative solutions in the 600V power transistor category, the STF18N60M2 offers several distinct advantages:
- Superior RDS(on) per unit area ratio
- Optimized switching losses for high-frequency operation
- Enhanced thermal stability across operating temperature range
- Improved gate charge characteristics for faster transitions
- Robust short-circuit withstand capability
These characteristics translate directly into system-level benefits, including higher overall efficiency, reduced heatsinking requirements, and simplified thermal management solutions. The device's performance envelope makes it particularly attractive for applications targeting Energy Star compliance and other efficiency standards.
Tags: Power Electronics, N-Channel MOSFET, Industrial Transistors, TO-220 Components, High-Voltage FETs