STF18N60DM2 N-Channel MOSFET 600V 13A TO-220FP
- Brand: STMicroelectronics
- Product Code: STF18N60DM2
- Availability: In Stock
$0.48
- Ex Tax: $0.48
Revolutionizing Power Management with STF18N60DM2 MDmesh™ DM2 N-Channel MOSFET
In the ever-evolving landscape of power electronics, STMicroelectronics' STF18N60DM2 MOSFET emerges as a game-changer for engineers seeking superior performance in high-voltage applications. This advanced N-channel transistor combines cutting-edge MDmesh™ DM2 technology with robust specifications, making it an ideal choice for modern power conversion systems requiring exceptional efficiency and reliability.
Advanced Silicon Architecture
At the heart of this TO-220FP packaged device lies ST's proprietary MDmesh™ DM2 technology, which dramatically reduces on-state resistance while maintaining exceptional switching characteristics. With a rated drain-source voltage of 600V and a continuous drain current capacity of 13A at 25°C, this MOSFET delivers optimal performance in demanding applications such as switch-mode power supplies (SMPS), motor control systems, and industrial automation equipment.
Technical Excellence in Real-World Applications
The STF18N60DM2's impressive 295mΩ maximum RDS(on) at 10V gate drive ensures minimal conduction losses, while its 20nC gate charge specification enables rapid switching transitions. These characteristics translate directly to improved system efficiency and reduced thermal management requirements. The device's ±25V gate voltage rating provides enhanced operational flexibility, accommodating both standard and overvoltage conditions without compromising performance.
| Key Parameter | Value |
|---|---|
| Max VDSS | 600V |
| ID @25°C | 13A |
| RDS(on) | 295mΩ @6A,10V |
| Gate Charge | 20nC @10V |
| Operating Temp | -55°C to 150°C |
Designing with Confidence
Engineers will appreciate the device's through-hole mounting configuration and TO-220-3 full-pack package, which facilitates easy integration into existing PCB layouts while ensuring excellent thermal dissipation. The built-in 800pF input capacitance at 100V VDS enables precise control over switching characteristics, allowing designers to optimize EMI performance without sacrificing efficiency.
Reliability and Longevity
With its active product status and 25W maximum power dissipation rating, the STF18N60DM2 is engineered for extended operational life even in harsh environments. Its comprehensive protection features include advanced avalanche energy handling and thermal shutdown capabilities, ensuring rock-solid reliability in mission-critical applications across industrial, automotive, and consumer electronics sectors.
Tags: Power MOSFET, High Voltage Transistor, Industrial Power Components, Switching Transistors, TO-220 Package