STF15NM65N N-Channel MOSFET 650V 12A TO-220FP | MDmesh™ II Series

STF15NM65N N-Channel MOSFET: High-Performance Power Transistor for Demanding Applications

STMicroelectronics' STF15NM65N N-Channel MOSFET represents the cutting-edge of power semiconductor technology, combining robust performance with exceptional efficiency. As part of the renowned MDmesh™ II series, this device delivers 650V breakdown voltage and 12A continuous drain current capabilities while maintaining industry-leading thermal management characteristics. Designed for modern power electronics systems requiring compact form factors and minimal energy loss, this TO-220FP packaged transistor excels in both industrial and consumer applications.

Advanced Silicon Technology for Optimal Efficiency

Engineered with ST's proprietary MDmesh™ II technology, the STF15NM65N achieves an impressive 380mΩ maximum R_DS(on) at 6A/10V gate drive conditions. This exceptional on-resistance translates to significant conduction loss reduction - a critical factor in power supply designs where efficiency directly impacts thermal performance and system reliability. The innovative cell structure minimizes gate charge (33.3nC @ 10V), enabling faster switching transitions that reduce switching losses by up to 25% compared to conventional MOSFETs in similar voltage classes.

The device's 650V rating provides ample design margin for high-voltage applications such as industrial motor drives, renewable energy inverters, and switch-mode power supplies. Its ±25V gate voltage tolerance ensures robustness against transient voltage spikes, while the 4V maximum threshold voltage (at 250µA) guarantees stable operation across temperature extremes from -55°C to 150°C. The integrated TO-220FP package combines through-hole mounting stability with enhanced thermal dissipation capabilities, maintaining 30W power dissipation rating at case temperature.

Comprehensive Protection and Reliability

Beyond its electrical specifications, the STF15NM65N incorporates multiple protection features essential for harsh operating environments. The built-in avalanche energy rating ensures survival under inductive load switching conditions, while the 983pF input capacitance (at 50V V_DS) optimizes gate drive efficiency. The device meets stringent industrial standards for moisture sensitivity (MSL1) and RoHS compliance, with production traceability maintained through the entire manufacturing process.

This power transistor demonstrates exceptional performance in high-frequency switching applications, maintaining stable characteristics even at elevated operating temperatures. The symmetrical die design minimizes parameter variation across production batches, ensuring consistent performance in volume manufacturing environments. When compared to competing solutions in the 600-650V class, the STF15NM65N offers superior balance between on-resistance, switching speed, and thermal management.

Design Flexibility and Application Versatility

Engineers can leverage the STF15NM65N's performance characteristics across a wide range of applications including:

• Industrial motor drives and variable frequency drives
• Photovoltaic inverters and energy storage systems
• High-voltage DC-DC converters
• Appliance motor controls
• LED lighting power supplies

The device's compatibility with standard gate drive circuits simplifies integration into existing designs, while its through-hole packaging ensures mechanical robustness in vibration-prone environments. Designers can take advantage of STMicroelectronics' comprehensive technical support ecosystem, including SPICE models, thermal simulation tools, and application-specific design guides.

Tags: Power Electronics, Industrial Semiconductors, Energy Efficient Devices, Through Hole Components, High Voltage Transistors