STD6N80K5 SuperMESH5 MOSFET N-Channel 800V 4.5A DPAK

High-Performance STD6N80K5 SuperMESH5 MOSFET for Demanding Power Applications

STMicroelectronics' STD6N80K5 SuperMESH5 MOSFET represents the cutting-edge advancement in power semiconductor technology, delivering exceptional performance for high-voltage applications. This N-Channel MOSFET combines 800V breakdown voltage capability with 4.5A continuous drain current capacity in a compact DPAK package, making it an ideal choice for modern power management systems requiring both reliability and efficiency.

Advanced SuperMESH5 Technology

At the heart of this device lies ST's proprietary SuperMESH5 technology, which optimizes the trade-off between conduction and switching losses. The 800V-rated MOSFET achieves an impressive 1.6Ω R_DS(on) at 10V gate drive while maintaining fast switching characteristics. This technological breakthrough enables designers to create power supplies, motor controllers, and industrial automation systems with improved energy efficiency and thermal performance.

Key electrical characteristics include:

Robust Design for Industrial Environments

Engineered for harsh operating conditions, the STD6N80K5 features a ruggedized structure that guarantees stable performance across extreme temperature ranges (-55°C to 150°C). Its 30V gate voltage rating provides additional design margin, while the 255pF input capacitance at 100V ensures compatibility with standard gate drivers. The device's surface-mount DPAK package combines industry-standard footprint compatibility with enhanced thermal dissipation capabilities.

This MOSFET excels in various applications including:

• Switching power supplies (SMPS)
• Motor drive inverters
• Industrial automation equipment
• Renewable energy systems
• High-voltage DC-DC converters

Optimized for Modern Power Systems

With its 85W maximum power dissipation rating and advanced thermal management features, the STD6N80K5 addresses the critical requirements of high-density power designs. The device's low gate charge (7.5nC) enables fast switching transitions, reducing both conduction and switching losses in high-frequency applications. Its 5V gate threshold voltage allows direct interfacing with standard logic circuits while maintaining optimal performance.

The TO-252-3 package provides mechanical robustness and simplified PCB assembly, while STMicroelectronics' stringent quality control ensures consistent performance across production batches. This device meets the growing demand for power components that can deliver higher efficiency while maintaining reliability in increasingly compact designs.

Tags: Power Electronics, MOSFET Transistors, High Voltage Semiconductors, STMicroelectronics Components