STD60NF55LT4 STMicroelectronics 55V 60A N-Channel MOSFET

STD60NF55LT4 STMicroelectronics 55V 60A N-Channel MOSFET

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High-Performance Power Management with STMicroelectronics STD60NF55LT4 MOSFET

The STMicroelectronics STD60NF55LT4 represents the next generation of power MOSFET technology in the STripFET™ II series. Designed for demanding applications requiring exceptional efficiency and reliability, this N-Channel MOSFET combines advanced engineering with proven performance metrics. With its 55V voltage rating and 60A current capacity, this surface-mount device delivers optimal power handling in a compact DPAK package.

Technical Excellence in Power Semiconductor Design

Engineered with STMicroelectronics' proprietary STripFET™ technology, the STD60NF55LT4 achieves remarkable electrical characteristics. The device maintains a maximum RDS(on) of just 15mΩ at 30A and 10V gate-source voltage, significantly reducing conduction losses. Its optimized gate charge (56nC @ 5V) ensures fast switching performance while maintaining thermal stability across extreme operating conditions.

This power MOSFET demonstrates exceptional durability with its ±15V gate voltage rating and operates effectively across a wide temperature range (-55°C to 175°C). The device's 1950pF input capacitance at 25V VDS enables efficient signal processing in high-frequency applications, making it suitable for modern power conversion systems.

ParameterSpecification
Drain-Source Voltage55V
Continuous Drain Current60A (at 25°C)
RDS(on) Max15mΩ @ 10V VGS
Gate Charge56nC
Operating Temperature-55°C to 175°C
Applications and System Integration

The versatility of the STD60NF55LT4 makes it ideal for various power electronics applications including:

- Industrial motor drives and automation systems

- Automotive power management solutions

- High-efficiency DC-DC converters

- Renewable energy systems (solar inverters, battery storage)

- Consumer electronics power supplies

Its TO-252-3 (DPAK) package facilitates easy thermal management through standard PCB layouts, while the surface mount design enables automated assembly processes. The device meets RoHS compliance standards and is available in tape & reel packaging for high-volume manufacturing.

Performance Advantages

Compared to conventional MOSFET solutions, the STripFET™ II technology provides:

• Reduced on-state resistance for lower power losses

• Enhanced thermal cycling capability

• Improved avalanche energy rating

• Lower electromagnetic interference (EMI)

• Higher current density in smaller package sizes

Design Considerations

When implementing the STD60NF55LT4 in circuit designs, engineers should consider:

• Gate driver capability (4.5V-10V optimal range)

• PCB thermal vias for heat dissipation

• Input capacitance matching in parallel configurations

• Transient voltage protection for inductive loads

• Proper derating curves for elevated temperatures

Tags: Power Electronics, Semiconductor Devices, Industrial Components, Automotive Electronics, Renewable Energy

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