STD5NK50ZT4 N-Channel MOSFET | STMicroelectronics SuperMESH™ 500V 4.4A DPAK
- Brand: STMicroelectronics
- Product Code: STD5NK50ZT4
- Availability: In Stock
$0.24
- Ex Tax: $0.24
Introducing the STMicroelectronics STD5NK50ZT4 SuperMESH™ N-Channel MOSFET
The STMicroelectronics STD5NK50ZT4 SuperMESH™ N-Channel MOSFET represents a groundbreaking advancement in power electronics, engineered to deliver superior performance across diverse industrial and automotive applications. Designed with ST's proprietary SuperMESH™ technology, this device combines high voltage capabilities with exceptional efficiency, making it an indispensable component for modern power systems. Whether you're developing cutting-edge power supplies, motor control systems, or automotive electronics, this MOSFET offers the perfect balance of performance and reliability.
Technical Specifications and Performance Metrics
Key Electrical Parameters
Parameter | Value |
---|---|
Drain to Source Voltage (Vdss) | 500 V |
Continuous Drain Current (Id) | 4.4A (Tc) |
Rds On (Max) | 1.5Ohm @ 2.2A, 10V |
Gate Charge (Qg) | 28 nC @ 10 V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Operating at the intersection of high voltage and high efficiency, this N-Channel MOSFET maintains exceptional performance metrics even under demanding conditions. Its 500V rating enables reliable operation in high-voltage environments, while the 4.4A continuous drain current ensures robust power delivery. The device's 1.5Ω Rds(on) at 2.2A/10V guarantees minimal power loss, translating to improved system efficiency and reduced thermal management requirements.
Design Features and Engineering Advantages
Engineered for modern electronic systems, the DPAK packaging combines mechanical durability with excellent thermal dissipation characteristics. The ±30V gate-source voltage rating provides enhanced protection against voltage transients, while the 535pF input capacitance at 25V ensures fast switching performance. With a power dissipation capacity of 70W (Tc), this device maintains stable operation even in high-stress applications. The surface mount design facilitates automated assembly processes while maintaining mechanical stability in vibration-prone environments.
The SuperMESH™ technology at its core employs advanced charge compensation techniques to minimize conduction losses without compromising voltage handling capabilities. This innovative approach results in a device that combines the advantages of high-voltage operation with the efficiency typically associated with lower voltage transistors. The device's 4.5V gate threshold voltage ensures compatibility with standard logic circuits while maintaining noise immunity in electrically noisy environments.
Applications in Modern Electronics
This versatile power MOSFET excels across a wide range of applications, from industrial motor drives and power factor correction circuits to automotive lighting systems and renewable energy inverters. Its robust construction and wide operating temperature range (-55°C to 150°C) make it particularly well-suited for automotive electronics where thermal cycling and environmental extremes are common. In switching power supplies, the device's fast switching characteristics and low gate charge contribute to higher system efficiency and reduced component count.
For design engineers, the STD5NK50ZT4 offers significant advantages in circuit design flexibility. Its TO-252-3 package format provides a space-efficient solution while maintaining the thermal performance of larger packages. The tape & reel packaging format simplifies integration into automated production lines, ensuring consistent quality in high-volume manufacturing environments. The device's compliance with active product status standards guarantees long-term availability for production systems.
Why Choose STMicroelectronics SuperMESH™ Technology?
As a global leader in semiconductor solutions, STMicroelectronics brings decades of expertise to its SuperMESH™ product line. This particular MOSFET exemplifies the company's commitment to innovation through its optimized balance of electrical characteristics and physical robustness. The device's 28nC gate charge at 10V enables high-frequency switching applications while maintaining manageable drive power requirements. With its 70W power dissipation rating (Tc), the MOSFET maintains reliable operation even in thermally constrained environments.
The device's design incorporates advanced packaging techniques that ensure long-term reliability in harsh operating conditions. The DPAK format combines the thermal advantages of traditional power packages with the space-saving benefits of surface mount technology. This makes it ideal for applications requiring high reliability in compact form factors, such as automotive electronics and industrial control systems. The component's active status in STMicroelectronics' product portfolio ensures ongoing technical support and supply chain stability.
Conclusion: A Reliable Choice for Demanding Applications
The STMicroelectronics STD5NK50ZT4 SuperMESH™ N-Channel MOSFET stands as a testament to engineering excellence in power semiconductor design. Its comprehensive feature set, combining high voltage operation with exceptional efficiency and reliability, makes it an optimal choice for demanding applications across multiple industries. From industrial automation systems to automotive power electronics, this device delivers the performance characteristics needed to create next-generation electronic systems. With its proven track record in demanding environments and the backing of STMicroelectronics' industry-leading support, this MOSFET represents a smart investment for any power electronics application requiring both performance and reliability.
Tags: N-Channel MOSFET, SuperMESH Technology, High Voltage MOSFET, Industrial Power Electronics, Automotive Grade Transistor