STMicroelectronics STD2NK90ZT4 N-Channel MOSFET 900V 2.1A DPAK

High-Performance Power Management with STMicroelectronics STD2NK90ZT4

In the ever-evolving landscape of power electronics, the STMicroelectronics STD2NK90ZT4 emerges as a cutting-edge solution for engineers seeking reliability and efficiency in high-voltage applications. This advanced N-Channel MOSFET, engineered with ST's proprietary SuperMESH™ technology, combines robust performance metrics with a compact DPAK package to meet the demands of modern power systems. Designed for applications ranging from industrial motor drives to renewable energy inverters, the STD2NK90ZT4 represents a perfect balance between technical excellence and practical implementation.

Technical Excellence in a Compact Form Factor

At the heart of this component lies an impressive 900V drain-source voltage rating, making it ideal for high-voltage switching applications where reliability is paramount. The device maintains a continuous drain current capacity of 2.1A at 25°C, while its 6.5Ω maximum Rds(on) at 10V gate-source voltage ensures minimal conduction losses. This exceptional combination of parameters allows engineers to design systems that maintain optimal performance while minimizing thermal management requirements.

Optimized for Demanding Environments

Engineered to thrive in challenging conditions, the STD2NK90ZT4 features ±30V gate-source voltage protection and a robust 70W power dissipation rating (at case temperature). Its surface-mount DPAK packaging not only facilitates efficient heat dissipation but also enables compact PCB layouts. The device's 4.5V maximum gate threshold voltage at 50µA ensures compatibility with standard logic-level gate drivers while maintaining precise control over switching characteristics.

Advanced Design for Enhanced Efficiency

STMicroelectronics' SuperMESH™ technology plays a crucial role in the device's superior performance. This innovative approach to MOSFET design significantly reduces switching losses while maintaining excellent thermal stability. With a maximum input capacitance of 485 pF at 25V and a fast 27 nC gate charge rating, the component enables high-frequency switching operations that are essential in modern power conversion systems. These characteristics make it particularly suitable for applications in power supplies, motor control circuits, and solar inverters where efficiency and reliability are critical.

Comprehensive Engineering Support

The STD2NK90ZT4 comes with comprehensive technical documentation and design resources, including detailed datasheets, application notes, and SPICE models. STMicroelectronics' global technical support network ensures engineers have access to expert guidance throughout the design process. The device's tape and reel packaging format further streamlines manufacturing processes, making it an ideal choice for both prototyping and high-volume production environments.

Tags: N-Channel MOSFET, Power Management, High Voltage, Surface Mount, DPAK Package