STMicroelectronics STD13N65M2 N-Channel MOSFET 650V 10A DPAK

STMicroelectronics STD13N65M2 N-Channel MOSFET: High-Performance Power Management

Engineered for demanding power applications, the STMicroelectronics STD13N65M2 N-Channel MOSFET represents the cutting-edge MDmesh™ M2 series. This 650V, 10A device combines advanced silicon technology with robust packaging to deliver exceptional efficiency and reliability in industrial, automotive, and consumer electronics. Designed for surface-mount applications, this DPAK-packaged transistor optimizes thermal performance while maintaining compact form factors.

Key Technical Advantages

At the heart of the STD13N65M2's performance is its remarkably low Rds(on) of 430mΩ at 5A and 10V gate-source voltage. This ultra-low on-resistance dramatically reduces conduction losses, making it ideal for high-frequency switching applications where thermal management is critical. The device's 650V breakdown voltage rating ensures compatibility with a wide range of power conversion systems, from motor drives to renewable energy inverters.

With a maximum gate charge of 17nC at 10V, this MOSFET minimizes switching losses while maintaining fast transition speeds. The ±25V gate-source voltage tolerance provides enhanced protection against voltage transients, while the 4V gate threshold voltage (at 250µA) ensures stable operation across varying temperature ranges (-55°C to 150°C operating junction temperature).

Design Flexibility and Reliability

The STD13N65M2 excels in harsh operating environments thanks to its thermally enhanced DPAK package (TO-252-3) that dissipates up to 110W (Tc). This surface-mount device (SMD) simplifies PCB layout while maintaining mechanical robustness through its reinforced leadframe structure. The device's active status in production ensures long-term availability for critical applications requiring consistent component sourcing.

As part of STMicroelectronics' MDmesh™ M2 family, this MOSFET incorporates advanced trench-gate technology that optimizes carrier distribution. This results in superior avalanche energy handling capabilities, making it suitable for applications involving inductive load switching or motor control systems where voltage spikes are common.

Application Versatility

The STD13N65M2 finds application across diverse industries:

• Switch-mode power supplies (SMPS) for telecommunications and server farms
• Motor drives and industrial automation equipment
• Renewable energy systems (solar inverters, energy storage)
• Home appliances with variable-speed motor control
• Automotive powertrain and body electronics

Its combination of high voltage rating, low on-resistance, and compact packaging makes it particularly valuable in space-constrained designs requiring high power density. The device's compliance with RoHS and REACH standards further enhances its suitability for environmentally conscious designs.

Thermal Performance and Packaging

The thermally optimized DPAK package enables efficient heat dissipation through both the drain tab and PCB-mounted leads. With a thermal resistance (RthJC) of 1.5°C/W, this device maintains operational stability even under continuous high-current conditions. The tape-and-reel packaging (TR) format simplifies automated assembly processes while ensuring component protection during transportation and storage.

For designers seeking alternatives, STMicroelectronics offers similar devices like the STD12N65M2 (with 12A rating) and the STD15N65M2 (15A version) within the same family, allowing seamless scalability across different power requirements.

Tags: Power MOSFET, N-Channel Transistor, High Voltage, Surface Mount, Industrial Electronics