STMicroelectronics STD13N60M2 N-Channel MOSFET 600V 11A DPAK
- Brand: STMicroelectronics
- Product Code: STD13N60M2
- Availability: In Stock
$0.26
- Ex Tax: $0.26
High-Performance Power Management with STMicroelectronics STD13N60M2 MOSFET
Engineered for demanding power electronics applications, the STMicroelectronics STD13N60M2 N-Channel MOSFET delivers exceptional performance in high-voltage systems. This advanced 600V transistor combines robust electrical characteristics with a compact DPAK surface-mount package, making it ideal for modern power conversion solutions where efficiency and reliability are critical.
Key Technical Specifications
| Parameter | Value |
|---|---|
| Drain-Source Voltage (Vdss) | 600 V |
| Continuous Drain Current | 11A @ 25°C |
| Rds(on) Max | 380mΩ @ 5.5A, 10V |
| Gate Charge | 17nC @ 10V |
| Operating Temperature | -55°C to 150°C |
Part of STMicroelectronics' MDmesh™ II Plus series, this MOSFET leverages advanced silicon technology to minimize conduction losses while maintaining excellent thermal stability. The device's 600V rating and 11A current capability make it particularly well-suited for industrial power supplies, motor control systems, and energy-efficient lighting applications.
One of the standout features of the STD13N60M2 is its optimized Rds(on) characteristic. The 380mΩ maximum resistance at 5.5A and 10V gate drive ensures minimal power dissipation, even under heavy load conditions. This is further enhanced by the device's 17nC gate charge specification, which reduces switching losses in high-frequency applications.
The surface-mount DPAK (TO-252-3) package combines mechanical robustness with excellent thermal performance. Its low-profile design enables integration into space-constrained PCB layouts while maintaining reliable heat dissipation through the exposed tab. This packaging solution makes the device particularly suitable for automated assembly processes in modern electronics manufacturing.
Operating temperature range from -55°C to 150°C junction temperature ensures reliable performance across extreme environmental conditions. The ±25V gate voltage rating provides additional design flexibility, while the 580pF input capacitance at 100V allows for efficient high-speed switching operations.
Designed with industrial and automotive applications in mind, this STMicroelectronics MOSFET meets rigorous reliability standards. Its 110W power dissipation rating (at case temperature) enables operation in demanding environments without requiring excessive thermal management infrastructure. The device's inherent ruggedness makes it suitable for applications involving inductive loads or voltage transients.
Key advantages include:
- Enhanced energy efficiency through low conduction losses
- Superior thermal management capabilities
- Robust design for industrial environments
- Automotive-grade reliability
- Space-saving surface-mount package
Whether you're designing power factor correction circuits, DC-DC converters, or motor drive systems, the STD13N60M2 provides the performance characteristics needed for modern power electronics. Its combination of high voltage capability, efficient operation, and compact packaging makes it a versatile solution for engineers seeking to optimize power system designs.
Tags: Power Transistors, Electrical Components, Semiconductor Devices, Industrial Electronics, Electronic Modules