STMicroelectronics STB6NK90ZT4 SuperMESH™ N-Channel MOSFET 900V 5.8A D2PAK
- Brand: STMicroelectronics
- Product Code: STB6NK90ZT4
- Availability: In Stock
$0.50
- Ex Tax: $0.50
Revolutionizing Power Management with STMicroelectronics STB6NK90ZT4 SuperMESH™ MOSFET
In the ever-evolving landscape of power electronics, STMicroelectronics continues to set new benchmarks with its SuperMESH™ technology. The STB6NK90ZT4 stands as a testament to this innovation, offering engineers a robust solution for high-voltage applications requiring exceptional performance and reliability. This N-channel MOSFET combines cutting-edge semiconductor design with optimized packaging to deliver superior electrical characteristics in demanding environments.
Key Technical Advantages
Engineered for high-voltage applications up to 900V, this device demonstrates STMicroelectronics' commitment to power management excellence. Its advanced MOSFET architecture achieves an impressive 2Ω maximum on-resistance at 2.9A and 10V gate-source voltage, ensuring minimal power loss and thermal generation. The device's 60.5nC gate charge at 10V drive voltage enables rapid switching performance while maintaining control over electromagnetic interference (EMI).
The STB6NK90ZT4's D2PAK surface-mount package (TO-263-3) provides exceptional thermal dissipation capabilities, supporting its 140W maximum power dissipation rating at case temperature. This combination of high voltage capability and thermal management makes it particularly well-suited for industrial power supplies, motor control systems, and renewable energy applications where reliability under stress is paramount.
| Parameter | Value |
|---|---|
| Drain-Source Voltage (Vdss) | 900V |
| Continuous Drain Current @25°C | 5.8A |
| On-Resistance (Rds(on)) | 2Ω @10V Vgs |
| Operating Temperature Range | -55°C to 150°C |
Advanced Design Features
Beyond its impressive electrical specifications, the STB6NK90ZT4 incorporates several design innovations that enhance system performance. The ±30V gate-source voltage rating provides robust protection against voltage transients, while the 1350pF input capacitance at 25V Vds optimizes switching performance in high-frequency applications. The device's 4.5V gate threshold voltage at 100µA ensures stable operation across varying temperature ranges while maintaining compatibility with standard gate drivers.
As part of STMicroelectronics' SuperMESH™ family, this MOSFET benefits from advanced charge-balancing technology that minimizes both conduction and switching losses. This makes it particularly effective in applications requiring high efficiency at elevated operating temperatures, such as industrial motor drives, welding equipment, and high-voltage DC-DC converters.
Industrial Applications and System Benefits
The STB6NK90ZT4's combination of high voltage capability, thermal resilience, and compact surface-mount packaging opens new possibilities for innovative power system designs. In renewable energy systems, its 900V rating enables more efficient solar inverters and energy storage solutions. The device's 140W power dissipation capability makes it ideal for industrial heating systems and high-power LED lighting applications requiring precise thermal management.
For power supply designers, the device's TO-263AB package offers the mechanical stability of through-hole components with the space-saving advantages of surface-mount technology. This hybrid approach enables reliable operation in environments with significant thermal cycling, while maintaining compatibility with automated assembly processes.
Tags: Power Transistors, High Voltage MOSFETs, Industrial Electronics, Energy Efficiency, Surface Mount Devices