STB40NF10LT4 N-Channel MOSFET 100V 40A D2PAK | STMicroelectronics STripFET II Series

STB40NF10LT4 N-Channel MOSFET 100V 40A D2PAK | STMicroelectronics STripFET II Series

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High-Performance STB40NF10LT4 N-Channel MOSFET for Demanding Power Applications

The STB40NF10LT4 from STMicroelectronics represents the cutting-edge of power transistor technology in the STripFET™ II series. Designed for engineers and manufacturers requiring exceptional efficiency and reliability, this N-channel MOSFET combines advanced semiconductor engineering with robust surface-mount packaging to deliver superior performance in high-current, high-temperature environments. With its 100V rating and 40A continuous drain current capability, this device sets new standards for power density and thermal management in industrial and automotive applications.

Technical Excellence in Power Transistor Design

At the heart of the STB40NF10LT4's impressive performance lies its optimized MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) architecture. The device achieves an exceptionally low Rds(on) of just 33mΩ at 20A and 10V gate-source voltage, significantly reducing conduction losses compared to conventional power transistors. This remarkable specification enables engineers to design more efficient power conversion systems while minimizing heat generation. The device's ±15V gate-source voltage rating provides enhanced operational flexibility, while its 2.5V gate threshold voltage at 250µA ensures compatibility with modern control circuits.

Engineered for high-frequency switching applications, the STB40NF10LT4 features a maximum gate charge of 64nC at 4.5V, enabling rapid transitions that reduce switching losses. The device's 2300pF input capacitance at 25V further contributes to its high-speed capabilities, making it ideal for demanding applications such as DC-DC converters, motor control systems, and battery management solutions. With a maximum power dissipation of 150W at case temperature, this transistor maintains performance even under extreme operating conditions.

Key SpecificationsPerformance Metrics
Drain-Source Voltage100V
Continuous Drain Current40A @ 25°C
Max Rds(on)33mΩ @ 10V Vgs
Gate Charge64nC @ 4.5V
Operating Temperature-65°C to 175°C
Industrial-Grade Reliability in D2PAK Packaging

Housed in STMicroelectronics' robust D2PAK (TO-263AB) surface-mount package, the STB40NF10LT4 combines excellent thermal performance with space-saving design. The package's three-terminal configuration (TO-263-3) with two leads and a tab facilitates efficient heat dissipation while maintaining compatibility with automated PCB assembly processes. This makes the device particularly well-suited for high-volume manufacturing applications where reliability and production efficiency are critical.

The transistor's wide operating temperature range (-65°C to 175°C) ensures stable performance in extreme environments, from industrial ovens to automotive engine compartments. Its 150W maximum power dissipation rating, measured at case temperature, demonstrates exceptional thermal management capabilities that extend component lifespan and improve overall system reliability.

Applications Across Power Electronics

The STB40NF10LT4's versatile performance characteristics make it an ideal choice for a wide range of power electronics applications. In industrial settings, it excels in motor drives, power supplies, and uninterruptible power systems (UPS) where efficiency and reliability are paramount. The device's high current capability and low on-resistance make it particularly well-suited for high-efficiency DC-DC converters in renewable energy systems and battery-powered equipment.

In automotive electronics, the transistor's rugged construction and wide temperature range meet the demanding requirements of modern vehicle systems. It's commonly used in electric vehicle charging circuits, on-board chargers, and powertrain control modules. The device also finds application in consumer electronics power management systems, where its high efficiency helps meet increasingly stringent energy consumption regulations.

Comparative Advantages in Power Transistor Market

When compared to alternative N-channel MOSFETs in the 100V class, the STB40NF10LT4 stands out through its optimal balance of electrical characteristics and thermal performance. Its STripFET™ II technology provides superior specific on-resistance (Rds(on) × Area) compared to competing solutions, enabling smaller heatsink requirements and reduced PCB space. The device's 5V/10V drive voltage compatibility ensures seamless integration with both standard and high-speed gate drivers, offering designers greater flexibility in system architecture.

The transistor's tape-and-reel packaging (Tape & Reel - TR) format facilitates efficient inventory management and automated component placement, making it particularly attractive for large-scale manufacturing operations. With a minimum order quantity of just one unit, developers can easily obtain samples for prototyping while maintaining cost-effectiveness for production runs.

Future-Proof Power Management Solution

As industries continue to push for greater energy efficiency and reduced carbon footprints, the STB40NF10LT4 offers a future-proof solution that meets current requirements while providing headroom for future design improvements. Its advanced characteristics support the development of next-generation power systems with higher switching frequencies, improved thermal management, and enhanced overall efficiency. By choosing this STMicroelectronics device, design engineers gain access to a well-established technology platform backed by comprehensive technical support and long-term supply assurance.

Tags: Power Transistors, N-Channel MOSFETs, Industrial Electronics, STripFET Technology, Surface Mount Devices

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