STMicroelectronics STB36NM60ND MOSFET N-Channel 600V 29A D²PAK

STMicroelectronics STB36NM60ND MOSFET N-Channel 600V 29A D²PAK

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Advanced Power Management with STMicroelectronics STB36NM60ND MOSFET

The STMicroelectronics STB36NM60ND MOSFET represents the pinnacle of power semiconductor technology, delivering exceptional performance for high-voltage applications in automotive, industrial, and renewable energy systems. This N-channel power transistor combines cutting-edge FDmesh™ II technology with automotive-grade reliability certifications, making it ideal for demanding environments where efficiency and durability are paramount.

Key Specifications at a Glance
ParameterValue
Max Voltage600 V
Continuous Drain Current29 A @ 25°C
RDS(on) Max110 mΩ @ 10 V VGS
Power Dissipation190 W (Tc)
Operating Temperature150°C (TJ)

Engineered for modern power conversion systems, this D²PAK packaged MOSFET (TO-263AB) offers optimal thermal performance through its surface-mount design. The device's ±25V gate voltage tolerance and 2785 pF input capacitance (at 50 V VDS) enable efficient switching in high-frequency applications while maintaining excellent conduction characteristics.

As an AEC-Q101 qualified component, the STB36NM60ND meets rigorous automotive standards for reliability and performance. Its advanced FDmesh™ II technology reduces on-resistance by 30% compared to previous generations, resulting in lower power losses and improved energy efficiency. The 5V gate threshold voltage (at 250µA) ensures compatibility with standard logic drivers while maintaining robust short-circuit protection.

Technical Advantages

The device's 80.4 nC gate charge (at 10 V) enables fast switching transitions, making it suitable for high-efficiency DC-DC converters, motor control systems, and solar inverters. The TO-263 package provides excellent heat dissipation capabilities while maintaining a compact footprint for space-constrained designs. With its 600V breakdown voltage rating, this MOSFET excels in PFC (Power Factor Correction) circuits and high-voltage motor drives.

Designers will appreciate the device's comprehensive protection features, including thermal shutdown and avalanche energy ratings that ensure reliable operation under extreme conditions. The 29A continuous drain current capacity (measured at case temperature) allows for robust power handling in industrial automation equipment and electric vehicle charging systems.

Application Versatility

This automotive-qualified MOSFET finds applications in:

  • Electric vehicle powertrains and battery management systems
  • Industrial motor drives and servo controls
  • Solar inverters and energy storage systems
  • High-voltage DC-DC converters
  • Uninterruptible power supplies (UPS)

The device's surface-mount packaging simplifies PCB assembly while maintaining through-hole equivalent power handling capabilities. Its RoHS-compliant construction and halogen-free materials meet modern environmental regulations without compromising performance.

Performance Optimization

For maximum efficiency in switching applications, designers should consider the following:

  • Implement proper gate drive circuitry to minimize switching losses
  • Use thermal vias in PCB design for optimal heat dissipation
  • Derate current specifications based on operating temperature
  • Implement snubber circuits for inductive load protection

The STB36NM60ND's datasheet provides detailed SOA (Safe Operating Area) curves and thermal resistance parameters to assist in system design. When used in parallel configurations, the device's positive temperature coefficient ensures natural current balancing between multiple transistors.

Tags: Automotive MOSFET, High Voltage Transistor, Power Electronics, Surface Mount FET, AEC-Q101 Component

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