STB35NF10T4 N-Channel MOSFET 100V 40A D2PAK | STMicroelectronics STripFET™ II
- Brand: STMicroelectronics
- Product Code: STB35NF10T4
- Availability: In Stock
$1.50
- Ex Tax: $1.50
High-Performance STB35NF10T4 N-Channel MOSFET for Demanding Power Applications
The STB35NF10T4 N-Channel MOSFET from STMicroelectronics stands as a benchmark in power transistor technology, designed to meet the rigorous demands of modern electronic systems. As part of the renowned STripFET™ II series, this device combines robust electrical characteristics with advanced packaging to deliver exceptional efficiency and reliability in high-power scenarios. Whether you're engineering industrial equipment, automotive systems, or high-frequency power supplies, the STB35NF10T4 offers the performance headroom needed to push design boundaries.
Key Electrical Specifications
At its core, the STB35NF10T4 boasts a 100V drain-source voltage rating and a continuous drain current capacity of 40A, making it suitable for applications requiring high voltage tolerance and substantial current handling. Its 35mΩ Rds(on) at 17.5A and 10V gate-source voltage minimizes conduction losses, directly improving system efficiency. This low on-resistance characteristic is particularly valuable in battery-powered applications where thermal management and energy savings are critical.
| Parameter | Value |
|---|---|
| Max Vdss | 100 V |
| Continuous Id | 40A (Tc) |
| Rds(on) Max | 35mΩ @ 17.5A, 10V |
| Gate Charge | 55 nC @ 10 V |
| Operating Temp | -55°C ~ 175°C (TJ) |
Advanced Design for Modern Electronics
This transistor employs MOSFET (Metal Oxide) technology with a gate charge maximum of 55nC at 10V, enabling fast switching performance crucial for applications like DC-DC converters and motor controllers. The ±20V gate-source voltage tolerance adds design flexibility while maintaining robustness against voltage spikes. Its 1550pF input capacitance at 25V ensures stable operation in high-frequency circuits, reducing parasitic oscillations that could compromise performance.
The D2PAK surface-mount package (TO-263-3 configuration) balances thermal efficiency with space-saving design, supporting power dissipation up to 115W (Tc). This makes the STB35NF10T4 particularly effective in automotive applications where vibration resistance and compact form factors are essential. The device's 4V gate threshold voltage (at 250µA) simplifies gate drive circuit design while maintaining compatibility with standard logic-level signals.
Applications and System Integration
While marked as Obsolete, this component remains a reference point for engineers working with legacy systems or seeking to understand STMicroelectronics' historical design approaches. Typical applications included:
- Automotive powertrain systems
- Industrial motor drives
- High-efficiency power supplies
- Solar inverters
- Uninterruptible power supply (UPS) units
Designers should note the device's surface-mount packaging requires careful thermal management considerations during PCB layout. The TO-263AB package dimensions allow for standard automated assembly processes while maintaining excellent thermal conductivity through the tab connection.
Performance Advantages
What sets the STB35NF10T4 apart is its optimization across multiple performance metrics:
Thermal Stability: The 115W power dissipation rating (at case temperature) enables operation in high-temperature environments without derating, crucial for automotive under-hood applications.
Switching Efficiency: With 55nC gate charge and 1550pF input capacitance, this MOSFET minimizes switching losses in high-frequency applications exceeding 100kHz.
Reliability: The -55°C to 175°C operating temperature range ensures reliable performance in extreme conditions, from Arctic industrial installations to engine compartment electronics.
Design Considerations
When integrating this device into power circuits, engineers should consider:
- Gate drive circuitry capable of delivering 10V for optimal Rds(on) performance
- Thermal vias in PCB design to enhance heat dissipation
- Snubber circuits for inductive load applications
- Proper derating curves for ambient temperatures above 25°C
While newer alternatives may offer improved specifications, the STB35NF10T4's proven performance makes it a valuable component for maintaining existing systems or educational purposes in power electronics design.
Tags: Power MOSFET, N-Channel Transistor, STMicroelectronics Components, High Voltage Transistor, Surface Mount Electronics