STMicroelectronics STB35N65DM2 N-Channel MOSFET 650V 28A D2PAK | MDmesh M2 Series Power Transistor
- Brand: STMicroelectronics
- Product Code: STB35N65DM2
- Availability: In Stock
$1.50
- Ex Tax: $1.50
High-Performance STB35N65DM2 MOSFET for Demanding Power Applications
STMicroelectronics continues to lead the power electronics industry with its MDmesh™ M2 series, exemplified by the STB35N65DM2 N-channel MOSFET. This advanced semiconductor device combines cutting-edge silicon technology with optimized packaging to deliver exceptional performance in high-voltage applications. Designed for engineers working on industrial power supplies, motor drives, and automotive systems, this 650V power transistor sets new standards in efficiency and reliability.
Key Technical Advantages
The STB35N65DM2 MOSFET features a robust 650V breakdown voltage rating with a continuous drain current capacity of 28A at 25°C. Its advanced MDmesh M2 technology ensures minimal conduction losses through a maximum RDS(on) of 110mΩ at 14A/10V operation. The device's 54nC gate charge specification at 10V drive voltage enables rapid switching transitions while maintaining gate control simplicity.
Engineered for durability, this power transistor withstands extreme operating conditions with its ±25V gate voltage tolerance and 210W maximum power dissipation rating. The 5V gate threshold voltage (at 250µA) ensures compatibility with standard logic circuits while maintaining noise immunity. Its thermal stability is further enhanced by a wide operating temperature range from -55°C to 150°C.
Parameter | Value |
Drain-Source Voltage (VDSS) | 650V |
Continuous Drain Current (ID) | 28A |
RDS(on) Max | 110mΩ @ 14A, 10V |
Gate Charge (Qg) | 54nC @ 10V |
Industrial & Automotive Applications
This D²PAK packaged MOSFET excels in applications requiring high-voltage switching and power conversion efficiency. Its 2400pF input capacitance at 100V makes it ideal for high-frequency power supplies, while the surface-mount design facilitates automated PCB assembly. Key application areas include:
• Renewable energy systems (solar inverters, wind turbine controls)
• Industrial motor drives and variable frequency drives
• Automotive powertrain systems (EV charging, 48V mild hybrid)
• High-efficiency server power supplies
• Uninterruptible power supply (UPS) systems
The device's TO-263AB package provides excellent thermal dissipation through its exposed tab, allowing reliable operation in high-power-density designs. Its RoHS-compliant construction and tape-and-reel packaging make it compatible with modern manufacturing processes while meeting environmental regulations.
Design Flexibility & System Optimization
Engineers benefit from the STB35N65DM2's balanced performance characteristics that enable system-level optimization. The combination of high breakdown voltage with low on-resistance reduces conduction losses by up to 30% compared to previous generation devices. This efficiency improvement directly translates to lower operating temperatures, reduced cooling requirements, and smaller heatsink footprints.
The device's 250µA gate threshold current ensures stable operation across varying temperature conditions, while its 54nC gate charge supports switching frequencies up to 200kHz without excessive driver losses. System designers can leverage these characteristics to create compact, high-density power solutions that meet modern energy efficiency standards.
Tags: Power Electronics, Industrial Components, Semiconductor Devices, Energy Efficiency, Electronic Manufacturing