STB33N60M2 N-Channel MOSFET | High-Voltage Power Transistor | STM
- Brand: STMicroelectronics
- Product Code: STB33N60M2
- Availability: In Stock
$1.00
- Ex Tax: $1.00
STB33N60M2: Advanced Power Management for Demanding Applications
The STB33N60M2 N-Channel MOSFET from STMicroelectronics represents a significant advancement in power semiconductor technology, designed to meet the rigorous demands of modern electronic systems. As part of the MDmesh™ II Plus series, this device combines high-voltage capability with exceptional thermal performance in a compact D²PAK surface-mount package. With its 600 V rating and 26 A continuous drain current capacity, this transistor serves as a critical component for power conversion systems requiring reliable operation under extreme conditions.
Technical Excellence in Power Electronics
At the heart of the STB33N60M2's performance lies its optimized silicon technology that achieves an impressive 125 mΩ maximum on-resistance at 13 A and 10 V gate-source voltage. This low Rds(on) value translates to reduced conduction losses and improved system efficiency, making it particularly valuable for applications like industrial motor drives, renewable energy inverters, and high-frequency power supplies. The device's 45.5 nC gate charge specification enables fast switching transitions while maintaining control over electromagnetic interference (EMI) generation.
| Parameter | Value |
|---|---|
| Drain-Source Voltage | 600 V |
| Continuous Drain Current | 26 A @ 25°C |
| Max Rds(on) | 125 mΩ @ 10 V Vgs |
| Gate Charge | 45.5 nC @ 10 V |
| Operating Temperature | -55°C to 150°C |
Engineered for Reliability
This power transistor incorporates STMicroelectronics' proprietary MDmesh technology that minimizes switching losses while maintaining robust avalanche energy ratings. The ±25 V gate voltage tolerance provides design flexibility while ensuring protection against voltage transients. With a thermal resistance (Rthjc) optimized for surface-mount applications, the D²PAK package enables efficient heat dissipation even in high-power-density designs. The device maintains stable performance across extreme operating temperatures, making it suitable for automotive electronics, industrial automation, and energy infrastructure applications.
Key advantages include:
- Exceptional dv/dt capability for reduced switching noise
- High thermal cycling endurance
- Lead-free and RoHS-compliant packaging
- Automotive-grade reliability certification
Design Flexibility and Applications
The STB33N60M2's versatility makes it ideal for various power electronics applications including:
• Renewable energy systems (solar inverters, wind turbine converters)
• Industrial motor drives and variable frequency drives
• High-efficiency power supplies (PFC circuits, SMPS)
• Electric vehicle charging infrastructure
• Uninterruptible power supply (UPS) systems
When designing with this device, engineers benefit from its compatibility with standard gate drive circuits while achieving significant improvements in system efficiency. The through-hole package option (TO-263AB) provides additional mounting flexibility for different PCB layouts.
Tags: Power Electronics, MOSFET Transistors, Industrial Components, Voltage Regulators, Electronic Switches