STMicroelectronics STB27NM60ND N-Channel MOSFET 600V 21A D²PAK | Automotive Grade
- Brand: STMicroelectronics
- Product Code: STB27NM60ND
- Availability: In Stock
$1.80
- Ex Tax: $1.80
STB27NM60ND: High-Performance Automotive Power MOSFET for Demanding Applications
STMicroelectronics continues to set industry benchmarks with its STB27NM60ND power MOSFET, a specialized component designed for automotive and industrial applications requiring exceptional voltage handling and thermal stability. As part of the FDmesh™ II series, this N-channel transistor combines advanced silicon technology with automotive-grade reliability, making it ideal for powertrain systems, electric vehicle infrastructure, and industrial motor controls.
Key Technical Advantages
Engineered for high-voltage environments, the STB27NM60ND delivers 600V drain-source voltage capability with a continuous drain current capacity of 21A at 25°C. Its optimized RDS(on) of 160mΩ at 10.5A ensures minimal conduction losses, while the advanced FDmesh™ II technology enhances switching performance. The device maintains stable operation at gate voltages up to ±25V, with a maximum threshold voltage of 5V at 250µA, making it compatible with standard gate drivers.
The transistor's robust design incorporates 160W maximum power dissipation (at Tc) and operates reliably at junction temperatures up to 150°C. The D²PAK (TO-263) surface-mount package provides excellent thermal management, crucial for maintaining performance in compact automotive electronics and high-power industrial equipment.
| Parameter | Value |
|---|---|
| VDSS | 600V |
| ID @ 25°C | 21A |
| RDS(on) | 160mΩ @ 10.5A, 10V |
| Qg @ 10V | 80nC |
| Ciss @ 50V | 2400pF |
Automotive-Grade Reliability
Qualified to AEC-Q101 standards, the STB27NM60ND meets rigorous automotive requirements for endurance and performance stability. Its tape-and-reel packaging format ensures safe handling during automated PCB assembly processes. The device's design incorporates STMicroelectronics' proprietary FDmesh™ II technology, which reduces switching losses while maintaining robustness against voltage spikes common in automotive power systems.
When integrated into electric vehicle chargers, on-board chargers, or industrial motor drives, this MOSFET demonstrates exceptional reliability under thermal cycling and mechanical stress conditions. The surface-mount D²PAK package facilitates efficient heat dissipation, critical for maintaining performance in space-constrained automotive environments.
Design Flexibility and Applications
While primarily targeted at automotive applications, the STB27NM60ND's specifications make it valuable in various power electronics contexts. Design engineers appreciate its compatibility with standard 10V gate drivers, simplifying circuit design while maintaining optimal performance. The transistor's high voltage capability and robust thermal characteristics make it suitable for:
• Electric vehicle battery management systems
• Automotive powertrain electronics
• Industrial motor drives
• Renewable energy inverters
• High-voltage DC-DC converters
As an obsolete-part-qualified device, the STB27NM60ND remains a critical component in legacy systems requiring replacement parts. Its enduring performance characteristics continue to make it a viable choice for designers maintaining existing equipment while transitioning to newer technologies.
Tags: Power Electronics, Automotive Grade, MOSFET Transistors, High Voltage, Industrial Applications