STB25NM60ND 600V 21A N-Channel MOSFET D2PAK
- Brand: STMicroelectronics
- Product Code: STB25NM60ND
- Availability: In Stock
$10.00
- Ex Tax: $10.00
High-Performance STB25NM60ND N-Channel MOSFET for Demanding Power Applications
The STB25NM60ND is a high-voltage N-Channel MOSFET engineered by STMicroelectronics to deliver exceptional performance in power management systems. With a robust 600V rating and 21A continuous drain current capacity, this D2PAK-packaged transistor combines advanced FDmesh™ II technology with industrial-grade reliability. Designed for surface-mount applications, it excels in switching power supplies, motor control systems, and industrial automation equipment where efficiency and thermal stability are critical.
Technical Excellence in Power Transistor Design
At its core, the STB25NM60ND leverages STMicroelectronics' proprietary FDmesh™ II technology to minimize conduction losses while maintaining fast switching capabilities. The device achieves a remarkable 160mΩ RDS(on) at 10.5A/10V, ensuring minimal power dissipation even under heavy loads. Its optimized gate charge characteristics (80nC @ 10V) enable efficient operation in high-frequency circuits, reducing both conduction and switching losses.
Engineered for harsh environments, this MOSFET features a ±25V gate voltage tolerance and operates reliably at junction temperatures up to 150°C. The D2PAK package provides excellent thermal dissipation through its low-profile surface-mount design, making it ideal for modern power electronics requiring compact form factors without compromising performance.
| Parameter | Specification |
|---|---|
| Max Voltage | 600 V |
| Continuous Current | 21 A (Tc) |
| RDS(on) | 160 mΩ @ 10.5A |
| Gate Charge | 80 nC @ 10V |
| Operating Temp | 150°C (TJ) |
Industrial Applications and System Benefits
This power transistor shines in applications requiring high breakdown voltage and efficient power delivery. Its 600V rating makes it suitable for industrial motor drives, renewable energy systems, and high-voltage DC-DC converters. The device's 2400pF input capacitance at 50V ensures stable operation in high-speed switching circuits while minimizing electromagnetic interference (EMI).
The STB25NM60ND's surface-mount D2PAK package simplifies PCB layout while maintaining excellent thermal performance through its low thermal resistance (160W @ Tc). This combination of packaging efficiency and electrical performance enables designers to create more compact power systems without sacrificing reliability or power density.
Legacy Performance in Modern Electronics
While currently marked as obsolete, the STB25NM60ND remains a reference design for engineers seeking proven power transistor solutions. Its specification set continues to influence modern MOSFET development, particularly in industrial and automotive applications requiring robust high-voltage switching. Although newer alternatives exist, this device's performance characteristics still meet many contemporary power management requirements.
Tags: Power Electronics, High Voltage MOSFET, Industrial Transistors, Surface Mount Technology, Electrical Components