STB25N80K5 N-Channel MOSFET 800V 19.5A D2PAK

Revolutionizing Power Management with STB25N80K5 SuperMESH5™ MOSFET

In the ever-evolving landscape of power electronics, STMicroelectronics continues to push boundaries with its SuperMESH5™ technology. The STB25N80K5 N-Channel MOSFET stands as a testament to this innovation, delivering exceptional performance for high-voltage applications. Engineered to handle demanding power requirements, this device combines cutting-edge semiconductor design with robust thermal management capabilities, making it an ideal choice for modern power conversion systems.

Technical Excellence in Power Semiconductor Design

At the heart of the STB25N80K5 lies an advanced silicon die optimized for 800V operation, offering a perfect balance between electrical performance and reliability. With a continuous drain current rating of 19.5A at 25°C ambient temperature, this MOSFET excels in applications requiring efficient power handling. The device's 260mΩ maximum RDS(on) at 10V gate-source voltage ensures minimal conduction losses, translating to improved system efficiency and reduced thermal stress.

Advanced Features for Demanding Applications

The STB25N80K5 incorporates STMicroelectronics' proprietary SuperMESH5™ technology, which significantly enhances switching performance while maintaining exceptional avalanche ruggedness. This fifth-generation technology reduces gate charge to 40nC (max at 10V), enabling faster switching transitions and minimizing switching losses. The device's ±30V gate voltage rating provides enhanced design flexibility, while the 1600pF input capacitance (max at 100V) ensures stable operation in high-frequency applications.

Engineered for surface mount compatibility, the D2PAK (TO-263) package offers excellent thermal dissipation through its exposed tab. This design allows for efficient heat transfer to the PCB, supporting reliable operation even under full load conditions. The device's wide operating temperature range (-55°C to 150°C) ensures performance stability in challenging environments.

Industrial-Grade Reliability

Designed for mission-critical applications, the STB25N80K5 meets stringent industrial standards with its 250W maximum power dissipation rating (at case temperature). The 5V gate threshold voltage (max at 100µA) ensures compatibility with standard logic levels while maintaining noise immunity. These specifications make it particularly suitable for power supplies, motor controls, and industrial automation equipment where reliability is paramount.

Performance-Driven Design Considerations

Engineers will appreciate the device's optimized parameter matching between gate charge and RDS(on), which enables precise control over switching characteristics. The combination of high voltage capability with low on-resistance makes this MOSFET particularly effective in resonant converter topologies and high-voltage DC-DC applications. Its tape and reel packaging format facilitates automated assembly processes, ensuring consistent production quality.

Tags: Power Electronics, MOSFET Technology, Industrial Components, Semiconductor Devices, Electronic Design