STB21NM60ND N-Channel MOSFET 600V 17A D2PAK | STMicroelectronics

High-Performance STB21NM60ND N-Channel MOSFET for Demanding Power Applications

STMicroelectronics continues to set industry standards with its FDmesh™ II series, and the STB21NM60ND N-Channel MOSFET exemplifies this innovation. Designed for high-voltage power electronics applications, this device combines advanced silicon technology with robust packaging to deliver exceptional efficiency, thermal stability, and reliability in challenging environments.

Technical Excellence in Power Management

At the core of the STB21NM60ND's performance lies its optimized 600 V drain-source voltage rating, which ensures reliable operation in power conversion systems handling mains voltage and beyond. The device maintains a continuous drain current capacity of 17A at 25°C, with thermal performance specifically engineered for surface-mount applications. Its 220mΩ maximum R_DS(on) at 8.5A and 10V gate drive minimizes conduction losses, while the 60 nC gate charge specification enables fast switching transitions without excessive driver power consumption.

This MOSFET features a 5V gate threshold voltage at 250µA, ensuring compatibility with standard logic-level gate drivers while maintaining excellent temperature stability. The ±25V gate-source voltage rating provides design flexibility, and the 1800 pF input capacitance at 50V measurement conditions contributes to predictable switching behavior in high-frequency circuits.

Industrial-Grade Design and Packaging

Housed in the space-efficient D2PAK (TO-263-3) surface-mount package, the STB21NM60ND balances thermal performance with modern manufacturing requirements. The package's robust construction allows operation at junction temperatures up to 150°C, with 140W maximum power dissipation measured at case temperature. This combination makes it suitable for industrial motor drives, power supplies, and energy-efficient lighting systems where thermal management and long-term reliability are critical.

The device's 10V drive voltage specification aligns with common gate driver ICs, simplifying circuit design while maintaining optimal conduction losses. Its obsolescence status reflects STMicroelectronics' ongoing commitment to component lifecycle management, ensuring availability for established designs while encouraging adoption of newer technologies where appropriate.

Applications and System Benefits

Engineers designing power conversion systems benefit from the STB21NM60ND's proven performance in:

• Switching power supplies and DC-DC converters
• Motor control and industrial automation equipment
• Lighting ballasts and energy-saving lighting systems
• Renewable energy systems requiring high-voltage MOSFETs

By combining high-voltage capability with low on-resistance and controlled switching characteristics, this device helps reduce system losses while maintaining compatibility with standard gate drive circuits. Its thermal stability ensures consistent performance across operating temperature ranges, making it particularly valuable in enclosed systems with limited airflow.

Design Considerations and Best Practices

When implementing the STB21NM60ND in practical designs, engineers should consider:

• Optimizing PCB layout for thermal dissipation through the device's tab connection
• Selecting appropriate gate drive strength to manage 60 nC charge efficiently
• Incorporating proper voltage clamping for inductive load switching applications
• Implementing thermal monitoring in high-temperature environments

The device's 150°C maximum operating junction temperature allows deployment in demanding environments, though proper thermal design remains crucial for achieving optimal reliability and longevity.

Tags: Power MOSFET, High Voltage Transistor, Industrial Electronics, Surface Mount Technology, Electrical Components