STB21N90K5 Power MOSFET by STMicroelectronics | 900V 18.5A D2PAK SuperMESH5 Technology

STB21N90K5 Power MOSFET by STMicroelectronics | 900V 18.5A D2PAK SuperMESH5 Technology

  • $2.98

  • Ex Tax: $2.98

Qty

High-Performance STB21N90K5 Power MOSFET for Demanding Applications

STMicroelectronics' STB21N90K5 N-Channel Power MOSFET represents the cutting-edge SuperMESH5™ technology, delivering exceptional performance for high-voltage industrial applications. This advanced semiconductor device combines robust electrical characteristics with optimized thermal management, making it ideal for power conversion systems requiring reliability and efficiency.

Technical Excellence in Power Management

Engineered with a 900V drain-source voltage rating and 18.5A continuous drain current capacity, the STB21N90K5 excels in challenging environments. Its 299mΩ maximum on-resistance at 10V gate-source voltage ensures minimal conduction losses, while the 43nC gate charge enables fast switching performance. The device's ±30V gate-source voltage tolerance provides enhanced operational flexibility.

The MOSFET's D2PAK surface-mount package (TO-263AB) combines high power dissipation capability (250W at Tc) with modern board integration requirements. Operating temperature range from -55°C to 150°C ensures reliable performance across industrial temperature extremes.

ParameterValue
Max Voltage900V
Continuous Current18.5A
Rds(on) Max299mΩ
Gate Charge43nC
Package TypeD2PAK
SuperMESH5™ Technology Advantages

This fifth-generation MOSFET technology features optimized cell design and advanced processing techniques. The resulting device offers superior avalanche energy capability and enhanced thermal cycling endurance. Designers benefit from reduced switching losses and improved short-circuit withstand capability compared to previous generations.

Key applications include:

  • Switch-mode power supplies (SMPS)
  • Motors and drives systems
  • Industrial automation equipment
  • Renewable energy inverters
  • High-voltage motor control
Design Flexibility and Reliability

The STB21N90K5's 5V gate threshold voltage (at 100µA) enables compatibility with standard logic drivers while maintaining noise immunity. With 1645pF input capacitance at 100V Vds, the device balances switching performance with stability requirements. The 250W power dissipation rating (at case temperature) supports high-current operations in compact designs.

Manufacturers can trust in STMicroelectronics' quality standards, with this MOSFET maintaining consistent performance across its 8000+ unit inventory. The tape-and-reel packaging facilitates automated assembly processes while ensuring component protection during handling.

Tags: Power MOSFET, N-Channel Transistor, High-Voltage Semiconductor, D2PAK Package, SuperMESH5 Technology

Be the first to write a review for this product.

Write a review

Note: HTML is not translated!
Bad           Good