STB18N60M2 N-Channel MOSFET 600V 13A D2PAK - High-Performance Power Transistor

Revolutionizing Power Management with STB18N60M2 N-Channel MOSFET

In the rapidly evolving landscape of power electronics, the STB18N60M2 N-Channel MOSFET from STMicroelectronics emerges as a game-changer for engineers and designers seeking unmatched efficiency and reliability. This high-voltage transistor, rated at 600V and 13A, combines cutting-edge MDmesh™ II Plus technology with a robust D2PAK surface-mount package, making it an ideal choice for demanding applications in industrial, automotive, and consumer electronics sectors.

Key Technical Advantages

The STB18N60M2's specifications reflect its superior engineering heritage. With a remarkably low Rds(on) of just 280mΩ at 6.5A and 10V gate drive, this transistor minimizes conduction losses while maintaining exceptional thermal stability. Its advanced gate charge characteristics (21.5nC at 10V) enable fast switching performance, crucial for modern power conversion systems operating at high frequencies. The device's ±25V gate voltage tolerance provides additional design flexibility while ensuring long-term reliability under varying operating conditions.

Engineered for real-world applications, this MOSFET demonstrates exceptional performance metrics:

Application Versatility

The STB18N60M2's design makes it particularly well-suited for power supply units, motor drives, and battery management systems. Its surface-mount D2PAK configuration offers superior thermal dissipation compared to traditional through-hole packages, while maintaining compatibility with automated PCB assembly processes. The device's operating temperature range (-55°C to 150°C) ensures reliable performance in extreme environments, from industrial ovens to automotive under-hood applications.

When integrated into switching power supplies, this MOSFET delivers significant efficiency improvements through its optimized switching characteristics and low output capacitance (791pF at 100V). The device's inherent robustness against voltage transients and thermal stress makes it particularly valuable in motor control applications where inductive kickback can challenge component longevity.

Engineering Excellence from STMicroelectronics

As part of STMicroelectronics' renowned MDmesh™ II Plus family, the STB18N60M2 benefits from decades of semiconductor innovation. The device's advanced trench gate structure minimizes on-state resistance while maintaining exceptional dielectric strength. This technological synergy results in a transistor that outperforms traditional silicon devices in both conduction and switching efficiency metrics.

Manufacturers choosing this component gain access to STMicroelectronics' comprehensive technical support ecosystem, including simulation models, design calculators, and application-specific white papers. The device's compliance with international environmental standards (RoHS, REACH) ensures regulatory compliance across global markets, while its tape-and-reel packaging facilitates automated production line integration.

Optimized for Modern Electronics Manufacturing

The STB18N60M2's surface-mount D2PAK package represents the perfect balance between thermal performance and manufacturing convenience. This configuration allows for efficient heat dissipation through the PCB while maintaining the automated handling advantages of surface-mount technology. With a minimum order quantity of 2000 units, this transistor offers exceptional value for volume production applications, while its tape-and-reel packaging ensures compatibility with high-speed pick-and-place equipment.

Tags: Power Electronics, High Voltage Transistor, Surface Mount MOSFET, Industrial Semiconductor, Energy Efficient Switching