STMicroelectronics STB150NF55T4 N-Channel MOSFET 55V 120A D2PAK
- Brand: STMicroelectronics
- Product Code: STB150NF55T4
- Availability: In Stock
$1.70
- Ex Tax: $1.70
Revolutionizing Power Management with STB150NF55T4 N-Channel MOSFET
In the ever-evolving landscape of power electronics, STMicroelectronics continues to set industry benchmarks with its advanced semiconductor solutions. The STB150NF55T4 N-Channel MOSFET exemplifies this innovation, delivering exceptional performance for demanding applications that require high current handling, minimal power loss, and robust thermal stability. Designed for modern power conversion systems, this device combines cutting-edge STripFET™ II technology with optimized packaging to meet the rigorous demands of industrial, automotive, and consumer electronics sectors.
Technical Excellence in Compact Packaging
Engineered with precision, the STB150NF55T4 features a D2PAK surface-mount package that balances compact form factor with superior thermal management. This TO-263-3 variant device maintains exceptional performance metrics: a 55V drain-source voltage rating, 120A continuous drain current at 25°C, and an impressively low 6mΩ on-resistance at 10V gate-source voltage. The device's ±20V gate-source voltage tolerance provides enhanced reliability in switching applications, while its 300W maximum power dissipation rating (at case temperature) ensures sustained operation under heavy loads.
For engineers seeking precise parameter control, the MOSFET's 4V gate threshold voltage (measured at 250µA) enables predictable switching behavior. The 190nC gate charge at 10V drive voltage contributes to faster switching speeds with reduced energy loss, making it ideal for high-frequency power supplies and motor control circuits. With 4400pF input capacitance at 25V VDS, the device maintains stable operation across wide voltage ranges while minimizing oscillations.
Parameter | Value |
---|---|
Max VDS | 55V |
Continuous Id | 120A |
RDS(on) Max | 6mΩ @ 10V |
Gate Charge | 190nC |
Package | D2PAK |
Optimized for Demanding Applications
The STB150NF55T4's wide operating temperature range (-55°C to 175°C) makes it suitable for both extreme industrial environments and automotive power systems. Its surface-mount design facilitates automated PCB assembly while maintaining excellent thermal performance through the device's tab connection. The absence of special FET features indicates a focus on core performance parameters rather than unnecessary add-ons, appealing to engineers prioritizing reliability and efficiency.
This MOSFET excels in applications such as DC-DC converters, battery management systems, and motor drives where minimizing conduction losses is critical. The combination of high current capability and low on-resistance enables significant efficiency improvements in power supplies, reducing system cooling requirements and overall operating costs. Its compatibility with standard gate drivers ensures straightforward integration into existing circuit designs.
STMicroelectronics' Quality Assurance
As part of STMicroelectronics' esteemed STripFET™ II series, the STB150NF55T4 adheres to the manufacturer's stringent quality standards. The device's active production status guarantees long-term availability for production environments, while its tape & reel packaging supports high-volume manufacturing processes. With 85 units currently in stock and a minimum order quantity of 1, this component offers flexibility for both prototyping and large-scale deployment.
Tags: Power MOSFET, N-Channel Transistor, STMicroelectronics Components, D2PAK Package, High Current Transistor