STB13NM60N N-Channel MOSFET Transistor
- Brand: STMicroelectronics
- Product Code: STB13NM60N
- Availability: In Stock
$0.80
- Ex Tax: $0.80
High-Performance STB13NM60N N-Channel MOSFET for Demanding Power Applications
STMicroelectronics' STB13NM60N N-Channel MOSFET represents the cutting-edge MDmesh™ II technology, delivering exceptional power handling capabilities in a compact D2PAK surface-mount package. This advanced transistor combines high voltage endurance with optimized conduction efficiency, making it ideal for modern power conversion systems requiring both performance and reliability.
Advanced Power MOSFET Technology
Engineered with STM's proprietary MDmesh™ II process, this 600V transistor features a remarkable 360mΩ RDS(on) at 5.5A/10V, significantly reducing conduction losses in switching applications. The device's ±25V gate voltage tolerance and 4V maximum threshold voltage ensure stable operation across diverse thermal conditions, while maintaining fast switching characteristics with 30nC gate charge.
Designed for industrial-grade reliability, the STB13NM60N maintains 90W power dissipation at 150°C junction temperature, demonstrating exceptional thermal management capabilities. Its TO-263AB package with exposed tab facilitates efficient heat dissipation, making it suitable for high-density designs in challenging environments.
| Parameter | Value |
|---|---|
| Max Voltage | 600 V |
| Continuous Drain Current | 11 A |
| RDS(on) | 360 mΩ |
| Gate Charge | 30 nC |
| Operating Temperature | 150°C |
Design Versatility in Power Electronics
This N-Channel MOSFET excels in various power conversion applications including switched-mode power supplies (SMPS), motor control systems, and industrial automation equipment. The device's surface-mount D2PAK package enables automated assembly while maintaining robust mechanical stability. Its 790pF input capacitance at 50V ensures minimal impact on driver circuitry, preserving switching efficiency in high-frequency designs.
Engineers benefit from the transistor's inherent reliability features: the 250µA threshold voltage specification guarantees consistent turn-on characteristics across production batches, while the built-in thermal protection enhances system longevity. The device's compliance with RoHS and halogen-free standards makes it suitable for environmentally conscious designs targeting global markets.
Optimized for Modern Power Architectures
In today's energy-conscious world, the STB13NM60N's combination of low on-resistance and fast switching characteristics directly contributes to improved system efficiency. When deployed in DC-DC converters or battery management systems, its 11A rating at 25°C allows for compact heat sinking solutions without compromising performance. The 10V drive voltage recommendation optimizes the balance between conduction losses and switching speed, making it particularly effective in renewable energy systems and electric vehicle charging infrastructure.
This STMicroelectronics device continues the legacy of MDmesh™ technology by offering superior avalanche energy ratings and enhanced body diode characteristics. Its robust construction ensures reliable operation in harsh environments, with proven performance in both continuous and pulsed drain current scenarios. The transistor's TO-263-3 package with reinforced insulation meets industry standards for industrial and automotive applications.
Tags: Power Electronics, Semiconductor Devices, Industrial Components, Electrical Engineering, Energy Systems