STMicroelectronics STB11NM80T4 N-Channel MOSFET 800V 11A D2PAK
- Brand: STMicroelectronics
- Product Code: STB11NM80T4
- Availability: In Stock
$4.00
- Ex Tax: $4.00
STB11NM80T4 N-Channel MOSFET: High-Power Transistor for Demanding Applications
STMicroelectronics continues to redefine performance benchmarks in power electronics with the STB11NM80T4 N-Channel MOSFET – a cutting-edge semiconductor solution engineered for high-voltage, high-current applications. This D2PAK-packaged transistor combines advanced MDmesh™ technology with robust thermal management to deliver exceptional efficiency and reliability in industrial, automotive, and power conversion systems.
Technical Specifications and Performance Features
Designed to operate at extreme conditions, the STB11NM80T4 boasts an impressive 800V drain-source voltage rating while maintaining a continuous drain current capacity of 11A. Its advanced trench-gate structure achieves an ultra-low on-resistance of 400mΩ at 10V gate-source voltage, significantly reducing conduction losses. The device's 43.6nC gate charge ensures fast switching performance, making it ideal for high-frequency applications such as switch-mode power supplies (SMPS), motor control systems, and renewable energy inverters.
| Parameter | Value |
|---|---|
| Vdss | 800 V |
| Id | 11 A |
| Rds(on) Max | 400 mΩ @ 5.5A, 10V |
| Gate Charge (Qg) | 43.6 nC @ 10V |
| Power Dissipation | 150W (Tc) |
| Operating Temperature | -65°C to 150°C |
The transistor's ±30V gate voltage rating provides enhanced protection against voltage spikes, while its 1630pF input capacitance ensures stable operation in noisy environments. The surface-mount D2PAK package combines excellent thermal dissipation with space-saving design, enabling reliable performance in compact electronic assemblies.
Why Choose the STB11NM80T4 for Power Electronics Design?
This MOSFET stands out in STMicroelectronics' portfolio through its perfect balance of electrical performance and mechanical durability. The MDmesh™ technology significantly reduces switching losses while maintaining exceptional avalanche energy ratings. Engineers appreciate its 5V gate threshold voltage with 250µA leakage current, which simplifies gate driver design while maintaining precise control over switching characteristics.
The device's thermal resistance (Rthjc) of 0.83°C/W ensures efficient heat transfer to the PCB, eliminating the need for complex heatsinking solutions in many applications. Its compliance with RoHS standards and automotive AEC-Q101 qualification make it suitable for both industrial and automotive environments, where reliability is paramount.
Applications benefiting from these features include:
- Industrial motor drives and servo controls
- Photovoltaic inverters and energy storage systems
- High-voltage DC-DC converters
- Uninterruptible power supplies (UPS)
- Electric vehicle charging systems
Active Stock and Competitive Pricing
We currently maintain active stock of the STB11NM80T4 in tape-and-reel packaging, with immediate availability for bulk orders. Our pricing structure offers significant volume discounts, with competitive rates starting at $4.00 per unit for qualified customers. This makes the STB11NM80T4 an economical choice for both prototyping and high-volume production runs.
When selecting power transistors for critical applications, engineers trust STMicroelectronics' decades of semiconductor expertise. The STB11NM80T4 exemplifies this legacy through its combination of high performance, proven reliability, and design flexibility. Whether you're developing next-generation power supplies or upgrading existing systems, this N-Channel MOSFET provides the technical capabilities and supply chain assurance needed for successful implementation.
Tags: Power Transistor, MOSFET, D2PAK, STM Semiconductor, High Voltage Electronics