Infineon IRFSL3607PBF HEXFET® MOSFET N-Channel 75V 80A TO-262
- Brand: Infineon
- Product Code: IRFSL3607PBF
- Availability: In Stock
$1.00
- Ex Tax: $1.00
Infineon IRFSL3607PBF HEXFET® MOSFET: High-Performance Power Solution
The Infineon IRFSL3607PBF HEXFET® MOSFET represents a pinnacle in power semiconductor technology, designed for high-efficiency applications requiring robust performance. This N-Channel MOSFET, part of Infineon's renowned HEXFET® series, combines advanced engineering with reliable specifications to meet the demands of modern power electronics. With a drain-to-source voltage rating of 75V and a continuous drain current capacity of 80A, this device is optimized for high-power switching applications in industrial, automotive, and consumer electronics.
Key Features and Technical Excellence
Engineered for precision and durability, the IRFSL3607PBF delivers exceptional electrical characteristics. Its low RDS(on) of 9mΩ at VGS = 10V ensures minimal conduction losses, enhancing thermal efficiency. The device's gate charge (Qg) of 84nC at 10V allows rapid switching, reducing operational delays in high-frequency circuits. Operating within a wide temperature range (-55°C to 175°C), it maintains stability in extreme environments while offering a maximum power dissipation of 140W (TC).
As an obsolete product in Infineon's portfolio, the IRFSL3607PBF remains a benchmark for performance-driven designs. Its TO-262 package with through-hole mounting provides mechanical robustness and efficient heat dissipation, making it ideal for power supplies, motor drives, and battery management systems. The device's ±20V gate-source voltage tolerance adds an extra layer of protection against voltage spikes.
| Parameter | Specification |
|---|---|
| Drain-Source Voltage (VDSS) | 75V |
| Continuous Drain Current (ID) | 80A (TC) |
| RDS(on) (Max) | 9mΩ @ 46A, 10V |
| Gate Charge (Qg) | 84nC @ 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
Applications and Industry Impact
While classified as obsolete, the IRFSL3607PBF continues to influence power electronics design. Its capabilities shine in DC-DC converters, uninterruptible power supplies (UPS), and industrial automation systems. The device's 3070pF input capacitance at 50V enables smooth operation in high-speed switching circuits, while its 4V gate threshold voltage ensures compatibility with standard logic drivers. Designers often implement this MOSFET in energy-efficient architectures where thermal management and space optimization are critical.
For engineers seeking alternatives, modern replacements like the IRFSL3607-7PPBF maintain similar performance characteristics with enhanced packaging options. However, the IRFSL3607PBF's legacy persists in existing systems requiring exact form-factor compatibility. When sourcing this component, designers should consider its end-of-life status and evaluate long-term availability from authorized distributors.
Design Considerations and Best Practices
Maximizing the IRFSL3607PBF's potential requires careful consideration of thermal management strategies. The TO-262 package's thermal resistance (RθJC) demands proper heatsinking for sustained operation at rated currents. Designers should implement gate drive circuits capable of delivering 10V to ensure optimal RDS(on) performance while protecting against overvoltage conditions through TVS diodes.
The device's 100µA gate threshold voltage (VGS(th)) specification simplifies driver selection, allowing compatibility with standard 12V and 15V gate drive supplies. When designing PCB layouts, minimizing trace inductance in the drain-source path prevents voltage spikes during switching transitions. For parallel operation configurations, individual gate resistors are recommended to ensure balanced current sharing between devices.
Conclusion: Legacy Performance in Modern Applications
Though marked as obsolete, the Infineon IRFSL3607PBF HEXFET® MOSFET remains a reference point for power electronics engineers. Its combination of high current capability, low on-resistance, and rugged packaging continues to support critical applications where reliability outweighs component lifecycle considerations. As industries transition to newer technologies like SiC and GaN semiconductors, this device serves as a benchmark for evaluating next-generation power solutions while maintaining relevance in existing designs requiring backward compatibility.
Tags: Power MOSFET, HEXFET Technology, Industrial Electronics, Power Supplies, Discontinued Components