IRFS4115TRLPBF N-Channel MOSFET | 150V 195A High-Power HEXFET® | Infineon Technologies

Revolutionizing Power Electronics: Infineon's IRFS4115TRLPBF HEXFET® MOSFET

In the ever-evolving landscape of power electronics, Infineon Technologies continues to push boundaries with its IRFS4115TRLPBF MOSFET – a high-performance N-channel HEXFET® device engineered for demanding applications. This 150V, 195A power transistor combines cutting-edge semiconductor technology with robust thermal management capabilities, setting new standards for efficiency and reliability in modern electronic systems.

Technical Excellence in Power Management

At the heart of this device lies Infineon's advanced MOSFET (Metal Oxide) technology, delivering exceptional electrical characteristics. With a maximum drain-source voltage (Vdss) of 150V and continuous drain current capacity of 195A at 25°C, the IRFS4115TRLPBF excels in high-power applications where thermal performance and electrical stability are critical. Its remarkably low Rds(on) value of 12.1mOhm at 62A and 10V gate-source voltage ensures minimal conduction losses, translating to improved system efficiency and reduced heat generation.

The device's optimized gate charge characteristics further enhance its switching performance. With a maximum gate charge (Qg) of 120nC at 10V, designers can achieve faster switching transitions while maintaining control over power dissipation. The ±20V gate-source voltage rating provides additional design flexibility, accommodating various driver configurations while ensuring long-term reliability.

Advanced Packaging for Thermal Performance

Housed in Infineon's D2PAK surface-mount package (TO-263-3), this MOSFET combines modern packaging technology with exceptional thermal dissipation. The low-profile D²Pak (2 Leads + Tab) configuration enables efficient heat transfer to the PCB, supporting the device's impressive 375W maximum power dissipation rating at case temperature. This thermal performance makes it ideal for high-density designs where space constraints would challenge traditional through-hole components.

Applications Across Industries

The IRFS4115TRLPBF's versatility shines across multiple sectors:

In industrial automation, its high current capability and thermal stability make it perfect for motor drives and power supplies. Automotive engineers leverage its robustness in electric vehicle systems, particularly in battery management and charging circuits. Renewable energy applications benefit from its efficiency in solar inverters and energy storage systems. The device also excels in server power supplies and telecom infrastructure where reliability under continuous operation is paramount.

Reliability and Longevity

Engineered for harsh environments, this MOSFET maintains performance across extreme temperatures (-55°C to 175°C). Its rugged design ensures consistent operation in industrial settings with demanding thermal cycles. The device's inherent stability at high voltages and currents reduces failure risks, while Infineon's manufacturing quality ensures long-term reliability even under continuous stress conditions.

Design Advantages

For circuit designers, the IRFS4115TRLPBF offers multiple advantages. The surface-mount packaging facilitates automated assembly processes, reducing manufacturing costs. Its low parasitic inductance design minimizes voltage spikes during switching transitions. The device's gate charge characteristics enable efficient operation across various switching frequencies, providing flexibility for different circuit topologies.

Technical Specifications Summary

Beyond its headline specifications, the IRFS4115TRLPBF boasts several critical performance metrics: 5270pF input capacitance at 50V, 5V gate threshold voltage at 250µA, and 250µA leakage current at maximum Vds. These specifications collectively ensure stable operation in high-frequency switching applications while maintaining compatibility with standard gate drive circuits.

Tags: HEXFET, Power Electronics, MOSFET Transistor, Infineon Components, Surface Mount MOSFET