Infineon IRFB7434PBF N-Channel MOSFET 40V 195A TO-220AB
- Brand: Infineon
- Product Code: IRFB7434PBF
- Availability: In Stock
$0.55
- Ex Tax: $0.55
Infineon IRFB7434PBF: High-Performance Power MOSFET for Demanding Applications
When it comes to power electronics, the Infineon IRFB7434PBF stands out as a robust and reliable solution for engineers and designers seeking high efficiency and durability. This N-Channel HEXFET® Power MOSFET, part of Infineon's renowned StrongIRFET™ series, is engineered to deliver exceptional performance in applications ranging from industrial motor drives to advanced power management systems. With a continuous drain current rating of 195A at 25°C and a 40V drain-source voltage capability, this device combines high power handling with optimized thermal management.
Key Technical Specifications
The IRFB7434PBF's specifications reveal its engineering excellence. Operating at a gate voltage of 10V, this MOSFET achieves a remarkably low RDS(on) of just 1.6mΩ, ensuring minimal conduction losses. The device's gate charge (Qg) is optimized at 324nC, enabling fast switching performance while maintaining efficiency. Its ±20V gate-source voltage rating provides enhanced reliability in harsh operating conditions, while the 10,820pF input capacitance at 25V ensures stable operation in high-frequency applications.
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDSS) | 40V |
| Continuous Drain Current (ID) | 195A |
| RDS(on) @ 10V VGS | 1.6mΩ |
| Gate Charge (Qg) | 324nC |
| Operating Temperature Range | -55°C to 175°C |
Engineering Advantages
What truly sets the IRFB7434PBF apart is its comprehensive design philosophy. The TO-220AB package not only facilitates efficient heat dissipation but also simplifies PCB mounting through its through-hole configuration. With a maximum power dissipation rating of 294W (Tc), this MOSFET can handle extreme thermal loads without compromising performance. The device's 3.9V gate threshold voltage ensures compatibility with standard logic drivers while maintaining precise control over switching characteristics.
Engineers will appreciate the device's advanced features that address modern power design challenges. The optimized balance between switching speed and conduction losses makes it ideal for applications in DC-DC converters, battery management systems, and high-current power supplies. Its ability to operate across extreme temperature ranges (-55°C to 175°C) ensures reliability in both industrial and automotive environments.
Real-World Applications
Practical implementation of the IRFB7434PBF reveals its versatility across multiple domains. In motor control applications, its low RDS(on) significantly reduces heat generation during PWM operations. For renewable energy systems like solar inverters, the device's high current capability enables efficient power conversion while maintaining system compactness. Automotive designers leverage its robust thermal performance in electric vehicle powertrains and onboard charging systems.
The device's 195A continuous drain current rating makes it particularly suitable for high-power density designs where space constraints demand maximum performance per square millimeter. When paired with appropriate thermal management solutions, the IRFB7434PBF can maintain optimal performance even in enclosed environments with limited airflow.
As part of Infineon's comprehensive MOSFET portfolio, the IRFB7434PBF benefits from the company's decades of semiconductor expertise. The device's packaging in industry-standard TO-220-3 format ensures easy integration with existing designs while maintaining mechanical durability. Designers can further enhance system reliability by taking advantage of the device's inherent avalanche energy ratings, though specific values would require consultation with Infineon's technical documentation.
Tags: IRFB7434PBF, Infineon Technologies, MOSFET, Power Electronics, TO-220AB