Infineon IRFB23N15DPBF MOSFET N-Channel 150V 23A TO-220AB

Infineon IRFB23N15DPBF MOSFET: High-Performance Power Solution for Demanding Applications

The Infineon IRFB23N15DPBF MOSFET represents a benchmark in power electronics, combining robust performance with reliability for high-voltage applications. As an N-Channel HEXFET® MOSFET designed for switching efficiency and thermal stability, this device operates at 150V with a continuous drain current of 23A. Its TO-220AB package ensures compatibility with standard mounting systems while maintaining excellent heat dissipation characteristics, making it ideal for industrial power supplies, motor control systems, and automotive electronics.

Technical Excellence in Power Management

Engineered with Infineon's advanced MOSFET (Metal Oxide) technology, the IRFB23N15DPBF delivers exceptional electrical performance. With a maximum Rds(on) of just 90mΩ at 14A and 10V gate drive, this device minimizes conduction losses while maintaining fast switching capabilities. The ±30V gate voltage rating provides enhanced protection against voltage spikes, while the 56nC gate charge (Qg) at 10V enables efficient operation in high-frequency circuits. The device's 1200pF input capacitance at 25V ensures stable performance across varying load conditions.

Thermal Performance and Reliability

Operating within -55°C to 175°C temperature range, the IRFB23N15DPBF demonstrates exceptional thermal stability. Its TO-220AB package achieves 136W power dissipation (Tc), enabling reliable operation in high-power applications. The device's 5.5V gate threshold voltage at 250µA ensures compatibility with standard logic drivers while maintaining robust short-circuit protection. These characteristics make it particularly suitable for applications requiring consistent performance under thermal stress.

For circuit designers, the IRFB23N15DPBF's through-hole mounting configuration simplifies PCB layout while ensuring mechanical stability. The device's HEXFET® series heritage guarantees proven reliability in demanding environments, from industrial automation systems to renewable energy inverters. Its 3.8W power dissipation rating at ambient temperature (Ta) further enhances design flexibility for various cooling solutions.

Applications and Design Considerations

This versatile MOSFET finds applications in multiple domains including:

• Switch-mode power supplies (SMPS)
• Brushless DC motor controllers
• Automotive power systems
• Industrial automation equipment
• Renewable energy systems

While currently listed as obsolete, the IRFB23N15DPBF remains in stock with 40,500 units available at competitive pricing ($0.67475 per unit at quantity 300). Designers should consider this when planning production timelines, with bulk packaging options available for large-scale implementations. The device's proven performance characteristics continue to make it a preferred choice for legacy systems and replacement applications.

Performance Optimization Strategies

For optimal performance, designers should consider the following implementation guidelines:

• Implement proper heatsinking for continuous operation near maximum current ratings
• Use gate resistor values between 5-10Ω for optimal switching performance
• Ensure PCB traces for drain and source connections maintain sufficient copper area for current handling
• Implement snubber circuits for inductive load applications
• Monitor operating temperatures using thermal vias in PCB design

The device's 150V rating makes it particularly suitable for applications requiring voltage headroom beyond typical 100V MOSFETs. When paired with appropriate driver circuits, its 10V gate drive characteristics ensure minimal switching losses while maintaining full enhancement of the channel region.

For applications where this device has been discontinued, Infineon's technical support recommends evaluating the IRFB26N15D and IRFB24N15D as potential alternatives. However, the IRFB23N15DPBF's unique combination of current capability and voltage rating makes it difficult to replace directly in certain high-power applications.

Tags: Power MOSFET, High Voltage MOSFET, Infineon Components, TO-220AB Transistor, 150V N-Channel MOSFET