Infineon IRF8010STRLPBF MOSFET N-Channel 100V 80A D2PAK Power Transistor

Infineon IRF8010STRLPBF: High-Performance Power MOSFET for Demanding Applications

In the realm of power electronics, the Infineon IRF8010STRLPBF stands as a testament to advanced engineering and reliability. This N-Channel HEXFET^® MOSFET, designed for high-voltage and high-current applications, offers exceptional performance in industrial motor drives, automotive systems, and power supply units. With its robust D2PAK packaging and cutting-edge Metal Oxide technology, this component bridges the gap between efficiency and durability in modern electronic systems.

Technical Excellence in Power Management

At the core of the IRF8010STRLPBF's capabilities lies its impressive 100V drain-to-source voltage rating and 80A continuous drain current capacity. These specifications make it an ideal choice for applications requiring high power density and minimal energy loss. The device's 15mΩ maximum on-resistance (Rds(on)) at 45A and 10V gate-source voltage ensures minimal conduction losses, translating to improved thermal performance and energy efficiency. This low Rds(on) value becomes particularly critical in battery-powered systems where maximizing operational time is essential.

Advanced Features for Enhanced Performance

The IRF8010STRLPBF incorporates Infineon's proprietary HEXFET^® technology, which optimizes the balance between switching speed and thermal stability. Its ±20V gate-source voltage rating provides robustness against voltage spikes, while the 3830pF input capacitance at 25V ensures fast switching transitions with minimal gate drive power consumption. The device's 260W maximum power dissipation (at case temperature) enables operation in high-stress environments without compromising longevity.

One of the standout features is its 4V maximum gate threshold voltage (Vgs(th)) at 250µA, which facilitates compatibility with standard logic-level drivers while maintaining excellent temperature stability. This characteristic proves particularly valuable in digital control systems where precise power regulation is required across varying operating conditions.

Industrial and Automotive Applications

The rugged surface-mount D2PAK package makes this MOSFET well-suited for automotive power systems, including electric vehicle traction inverters and 48V mild hybrid architectures. In industrial settings, its ability to handle 80A currents at elevated temperatures makes it a preferred choice for motor control circuits, uninterruptible power supplies (UPS), and welding equipment. The component's operating temperature range (-55°C to 175°C) ensures reliable performance in extreme environments, from sub-zero storage facilities to high-temperature manufacturing processes.

Design Advantages and System Integration

Engineers appreciate the IRF8010STRLPBF's tape-and-reel packaging format, which streamlines automated PCB assembly while maintaining component integrity during the manufacturing process. The TO-263AB package variant offers excellent thermal dissipation characteristics through its exposed drain tab, allowing direct mounting to heatsinks for enhanced thermal management. When designing with this MOSFET, circuit designers benefit from its inherent avalanche energy rating, which provides additional protection against voltage transients in inductive load applications.

For power supply designers working on synchronous rectification topologies, the device's low Qg of 120nC at 10V enables high-frequency switching operations without excessive driver power consumption. This characteristic becomes crucial in achieving compact power supply designs with improved efficiency metrics, particularly in data center server racks and telecommunications infrastructure where power density is paramount.

Tags: MOSFET, Power Transistor, Infineon Components, HEXFET, D2PAK