Infineon IRF540NPBF MOSFET N-Channel 100V 33A TO-220AB

Infineon IRF540NPBF MOSFET N-Channel 100V 33A TO-220AB

  • Brand: Infineon
  • Product Code: IRF540NPBF
  • Availability: In Stock
  • $0.18

  • Ex Tax: $0.18

Qty

Infineon IRF540NPBF: High-Performance N-Channel MOSFET for Demanding Applications

When it comes to power electronics, selecting the right MOSFET can make or break your design. The Infineon IRF540NPBF stands out as a robust N-Channel MOSFET engineered for high efficiency and reliability. With a 100V drain-source voltage rating and 33A continuous drain current capability, this device is designed to handle the demands of modern power systems while maintaining exceptional thermal performance.

Key Specifications at a Glance
ParameterValue
Drain-Source Voltage (Vdss)100V
Continuous Drain Current (Id)33A
RDS(on) Max @ 16A, 10V44mΩ
Gate Charge (Qg)71nC
Operating Temperature-55°C to 175°C

The IRF540NPBF belongs to Infineon's HEXFET® family, renowned for advanced power MOSFET technology that combines high-speed switching with low conduction losses. Its TO-220AB package ensures excellent heat dissipation, making it ideal for applications requiring sustained performance under load. The device's ±20V gate voltage tolerance provides added protection against voltage spikes, enhancing system robustness.

Engineers designing power supplies, motor controllers, or solar inverters will appreciate the IRF540NPBF's 44mΩ RDS(on) specification. This ultra-low on-resistance reduces conduction losses by up to 30% compared to previous-generation devices, directly translating to cooler operation and improved energy efficiency. The 71nC gate charge value enables fast switching transitions, minimizing switching losses in high-frequency applications like DC-DC converters operating above 100kHz.

Technical Advantages in Real-World Applications

Let's explore how these specifications translate to practical benefits:

In industrial motor drives, the device's 33A current rating allows for direct control of high-power brushless motors without requiring parallel MOSFET configurations. The 250µA threshold voltage specification ensures compatibility with standard logic-level gate drivers while maintaining precise control over switching characteristics. For automotive applications, the wide operating temperature range (-55°C to 175°C) guarantees reliable performance in extreme environmental conditions, from sub-zero cold starts to high-temperature engine bay environments.

The TO-220AB package combines mechanical durability with excellent thermal management. When mounted on a heatsink, the device can dissipate up to 130W of power, enabling continuous operation in demanding scenarios. This makes the IRF540NPBF particularly suitable for:

  • Switching power supplies (SMPS)
  • Electric vehicle charging systems
  • Industrial automation equipment
  • Renewable energy inverters
  • High-current LED lighting controllers

Compared to similar devices in its class, the IRF540NPBF offers several distinct advantages. Its 1960pF input capacitance at 25V strikes an optimal balance between switching speed and gate driver requirements. This allows designers to use standard gate driver ICs without overloading their output stages. The device's avalanche energy rating further enhances its reliability in inductive switching applications, where voltage spikes are common.

Design Considerations and Best Practices

To maximize the performance of the IRF540NPBF in your design, consider these implementation tips:

Implement proper gate drive circuitry to fully utilize the device's switching capabilities. A dedicated gate driver IC with at least 1A output capability is recommended for applications operating above 50kHz. For thermal management, ensure at least 2oz copper pad on the PCB with multiple thermal vias to the ground plane. When paralleling multiple devices, use individual gate resistors to prevent current imbalance and oscillations.

In power supply designs, combining the IRF540NPBF with Infineon's EiceDRIVER™ gate drivers creates a powerful solution for high-efficiency converters. For motor control applications, pairing it with a dedicated current-sense amplifier like the X9C103 can enable advanced protection features and precise torque control. The device's high short-circuit withstand capability makes it particularly suitable for applications requiring robust fault tolerance.

As part of Infineon's HEXFET® family, the IRF540NPBF incorporates advanced trench technology that reduces on-resistance while maintaining ruggedness. This technology advancement translates to real-world benefits: a 1kW DC-DC converter using this MOSFET can achieve 96% efficiency at full load, compared to 93% with previous-generation devices. The reduced conduction losses also mean smaller heatsink requirements, enabling more compact designs.

Tags: IRF540NPBF, HEXFET, N-Channel, TO-220AB, Power MOSFET

Be the first to write a review for this product.

Write a review

Note: HTML is not translated!
Bad           Good