IRF3805SPBF HEXFET MOSFET N-Channel 55V 75A D2PAK
- Brand: Infineon
- Product Code: IRF3805SPBF
- Availability: In Stock
$1.30
- Ex Tax: $1.30
IRF3805SPBF: High-Performance N-Channel Power MOSFET from Infineon
Infineon Technologies, a leader in power semiconductor innovation, brings its advanced HEXFET® technology to the IRF3805SPBF MOSFET. This N-channel power transistor combines cutting-edge engineering with robust performance metrics, making it an essential component for demanding power electronics applications. Designed for high-current switching operations, this device delivers exceptional efficiency and reliability in a compact D²PAK surface-mount package.
Technical Excellence in Power Semiconductor Design
The IRF3805SPBF represents the culmination of Infineon's decades of expertise in MOSFET technology. With a 55V drain-source voltage rating and 75A continuous drain current capacity, this device is specifically engineered for high-power density applications. The integrated D²PAK packaging ensures efficient heat dissipation while maintaining a space-saving footprint on PCB assemblies. When activated at 10V gate-source voltage, the transistor achieves an impressive 3.3mΩ on-resistance, minimizing conduction losses and enhancing thermal performance.
Engineered for modern power systems, this MOSFET features 290nC gate charge at 10V VGS, enabling fast switching transitions while maintaining control over electromagnetic interference. The ±20V gate-source voltage rating provides additional design flexibility, while the 7960pF input capacitance at 25V VDS ensures stable operation in high-frequency environments. These specifications make it particularly well-suited for applications requiring precise power control and minimal energy loss.
| Parameter | Value |
|---|---|
| Max Voltage | 55V |
| Max Current | 75A |
| On-Resistance | 3.3mΩ |
| Gate Charge | 290nC |
| Operating Temp | -55°C to 175°C |
Applications and Use Cases
While now marked as discontinued by Digi-Key, the IRF3805SPBF remains a benchmark in power electronics design. Its capabilities make it ideal for industrial motor drives, automotive power systems, and high-efficiency power supplies. The device's thermal stability and high current handling capacity have made it popular in electric vehicle charging systems, renewable energy inverters, and industrial automation equipment. The surface-mount package facilitates automated PCB assembly while maintaining excellent thermal performance through its low thermal resistance.
Historically used in server power supplies and telecom infrastructure, this MOSFET's specifications made it particularly well-suited for synchronous rectification circuits and DC-DC converters. Its ability to maintain performance across extreme operating temperatures (-55°C to 175°C) ensured reliability in harsh environments. For designers seeking replacements or alternatives, understanding the device's characteristics can help identify suitable modern equivalents.
Why Choose Infineon HEXFET Technology
Infineon's HEXFET® series has long been recognized for its innovative cell design that optimizes current distribution and minimizes parasitic inductance. The IRF3805SPBF benefits from this advanced technology, offering superior performance compared to conventional power MOSFETs. The device's 300W power dissipation rating (at case temperature) demonstrates its ability to handle extreme operating conditions while maintaining electrical integrity.
Despite its discontinuation status, this component remains relevant for legacy systems maintenance and engineers working on cost-effective power designs. The TO-263AB package provides mechanical robustness while ensuring excellent electrical connections. Designers appreciate the device's predictable behavior across operating conditions, which simplifies thermal management and reliability calculations.
Tags: IRF3805SPBF, Infineon MOSFET, D2PAK Transistor, 55V Power MOSFET, HEXFET Series