Infineon IRF3710PBF HEXFET® N-Channel MOSFET | 100V 57A TO-220AB
- Brand: Infineon
- Product Code: IRF3710PBF
- Availability: In Stock
$0.25
- Ex Tax: $0.25
Reliable Power Management with Infineon's IRF3710PBF HEXFET® MOSFET
Infineon Technologies continues to set industry standards in power electronics with its IRF3710PBF HEXFET® N-Channel MOSFET, a high-performance solution designed for demanding applications requiring efficient power conversion and thermal stability. This advanced MOSFET combines cutting-edge metal oxide semiconductor technology with robust packaging to deliver exceptional reliability in both industrial and automotive environments.
Key Technical Specifications
Engineered for high-power applications, the IRF3710PBF features a 100V drain-source voltage rating and a continuous drain current capacity of 57A at 25°C. Its optimized Rds(on) of 23mΩ at 28A ensures minimal conduction losses, while the 130nC gate charge at 10V drive voltage enables fast switching performance. The device's ±20V gate voltage tolerance provides enhanced protection against voltage spikes, making it suitable for harsh operating conditions.
| Parameter | Value |
|---|---|
| Max Drain-Source Voltage | 100V |
| Continuous Drain Current | 57A @ 25°C |
| Rds(on) Max | 23mΩ @ 28A, 10V |
| Gate Charge | 130nC @ 10V |
| Operating Temperature | -55°C to 175°C |
The TO-220AB package design offers excellent thermal dissipation capabilities, with a power dissipation rating of 200W at case temperature. This through-hole component's 3130pF input capacitance at 25V Vds ensures stable operation in high-frequency circuits. The device's 4V gate threshold voltage at 250µA allows for efficient drive circuit design while maintaining reliable switching characteristics.
Applications and Performance Benefits
As part of Infineon's HEXFET® product family, the IRF3710PBF excels in power supply, motor control, and automotive systems where efficient energy conversion is critical. Its advanced technology enables designers to create compact power solutions with improved energy efficiency, reduced thermal stress, and enhanced system reliability. The device's TO-220-3 package format offers mechanical stability and easy integration with standard heat sinking solutions.
Engineers can leverage this MOSFET's exceptional thermal performance in DC-DC converters, uninterruptible power supplies (UPS), and industrial motor drives. The device's high current rating and low on-resistance make it ideal for applications requiring high efficiency at elevated operating temperatures. Its automotive-qualified design also makes it suitable for 12V/24V vehicle systems, including electric power steering and battery management circuits.
Design Considerations and Integration
When implementing the IRF3710PBF in circuit designs, engineers should consider its 10V drive voltage requirements for optimal performance. The device's 250µA gate threshold characteristic necessitates proper gate drive circuitry to ensure complete enhancement while minimizing switching losses. For parallel operation applications, careful attention to thermal management and current sharing techniques will maximize reliability and longevity.
The component's tube packaging format simplifies handling and storage, while its active product status ensures long-term availability for production systems. With its comprehensive safety certifications and RoHS compliance, this MOSFET meets modern regulatory requirements for electronic manufacturing across multiple industries.
Tags: IRF3710PBF, N-Channel MOSFET, 100V FET, Infineon HEXFET, TO-220AB