STPS3150UF Schottky Diode | High-Efficiency 150V 3A SMBflat Diode

STPS3150UF Schottky Diode | High-Efficiency 150V 3A SMBflat Diode

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STPS3150UF: Revolutionizing Power Management with Advanced Schottky Technology

STMicroelectronics continues to push the boundaries of semiconductor innovation with the STPS3150UF Schottky diode, a cutting-edge solution designed for modern power electronics applications. This surface-mount device combines exceptional electrical characteristics with robust thermal performance, making it an ideal choice for engineers seeking reliable components in compact power systems. The SMBflat package format further enhances its appeal in space-constrained designs while maintaining excellent heat dissipation capabilities.

Technical Excellence in Power Diode Design

At the heart of the STPS3150UF lies STMicroelectronics' advanced Schottky barrier technology, which delivers remarkable performance metrics. With a maximum reverse voltage rating of 150V and a continuous forward current capacity of 3A, this diode excels in high-frequency switching applications. The device's forward voltage drop remains impressively low at 820mV even under full load conditions (3A), significantly reducing power losses and improving overall system efficiency. This performance advantage becomes particularly crucial in battery-powered devices and renewable energy systems where energy conservation is paramount.

ParameterValue
Max Reverse Voltage150V
Forward Current3A
Forward Voltage Drop820mV @ 3A
Reverse Leakage Current2µA @ 150V
Operating TemperatureUp to 175°C
Performance Advantages Across Applications

The STPS3150UF's fast recovery characteristics (≤500ns) make it particularly well-suited for switching power supplies, DC-DC converters, and freewheeling circuits. Its surface-mount SMBflat package enables automated assembly processes while maintaining excellent mechanical stability. The device's high junction temperature rating (175°C maximum) ensures reliable operation in demanding environments, from automotive electronics to industrial control systems. Notably, its low reverse leakage current (2µA at 150V) contributes to enhanced energy efficiency in standby modes, aligning perfectly with modern energy conservation standards.

When compared to traditional PN-junction diodes, the STPS3150UF demonstrates superior performance in multiple aspects. The Schottky architecture virtually eliminates reverse recovery time, resulting in reduced switching losses and electromagnetic interference (EMI). This characteristic proves particularly beneficial in high-frequency circuits where conventional diodes would suffer from significant performance degradation. Additionally, the flat leads of the SMBflat package improve board-level reliability by minimizing stress during thermal cycling.

Tags: Power Management Diodes, Surface Mount Components, High-Voltage Diodes, Fast Recovery Diodes, Industrial Electronics

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