Infineon IRFH7084TRPBF HEXFET N-Channel MOSFET
- Brand: Infineon
- Product Code: IRFH7084TRPBF
- Availability: In Stock
$0.34
- Ex Tax: $0.34
Infineon IRFH7084TRPBF: High-Performance Power MOSFET for Demanding Applications
The Infineon IRFH7084TRPBF is a cutting-edge N-Channel HEXFET® Power MOSFET designed to deliver exceptional performance in high-current, high-efficiency power management systems. As part of Infineon's renowned HEXFET product line, this 40V, 100A MOSFET combines advanced silicon technology with an optimized 8-PQFN package to provide superior thermal management and electrical characteristics. This comprehensive overview explores the device's technical specifications, design advantages, and diverse applications across modern electronics.
Key Technical Specifications
At its core, the IRFH7084TRPBF features a robust N-Channel MOSFET architecture engineered for high-speed switching applications. With a rated drain-to-source voltage (VDSS) of 40V and continuous drain current capacity of 100A at 25°C, this device excels in demanding power conversion environments. The table below summarizes its critical electrical parameters:
| Parameter | Value |
|---|---|
| RDS(on) (Max) | 1.25mΩ @ 10V VGS |
| Gate Charge (Qg) | 190nC @ 10V |
| Input Capacitance (Ciss) | 6560pF @ 25V |
| Operating Temperature Range | -55°C to 150°C |
The device's ±20V gate voltage tolerance and 3.9V maximum threshold voltage enable compatibility with standard logic-level drivers while maintaining excellent switching performance. Its 156W maximum power dissipation rating (at case temperature) underscores its ability to handle high-power loads in compact designs.
Advanced Packaging and Thermal Performance
Housed in an 8-PowerTDFN surface-mount package (5x6mm footprint), the IRFH7084TRPBF achieves an optimal balance between electrical conductivity and thermal efficiency. The PowerTDFN package's low profile (typically 0.75mm height) and exposed thermal pad enable direct PCB thermal coupling, facilitating efficient heat dissipation without requiring additional heatsinking components. This design approach significantly reduces system complexity while maintaining reliable operation under full-load conditions.
The device's 1.25mΩ on-resistance represents a major advancement in conduction loss reduction, translating to lower operating temperatures and improved system efficiency. When combined with its 190nC gate charge specification, this MOSFET enables rapid switching transitions with minimal energy loss - a critical advantage in high-frequency DC-DC converters and motor control applications.
Design Flexibility and Application Versatility
The IRFH7084TRPBF's comprehensive feature set makes it suitable for a wide range of power electronics applications. Its robust design excels in:
- Server and telecom power supplies
- Electric vehicle charging systems
- Industrial motor drives
- Renewable energy inverters
- High-current POL (Point of Load) converters
Engineers appreciate the device's ability to maintain stable performance across extreme temperature ranges (-55°C to 150°C), making it ideal for automotive and industrial environments where thermal cycling is common. The MOSFET's 6560pF input capacitance value strikes an optimal balance between switching speed and gate drive requirements, simplifying circuit design while minimizing component count.
Quality and Reliability
As part of Infineon's HEXFET family, the IRFH7084TRPBF undergoes rigorous quality testing to ensure compliance with industry standards. The device's active product status and tape-and-reel packaging format (TR) facilitate automated assembly processes while maintaining component integrity during handling and storage. With a minimum order quantity of just 1 unit and bulk availability (44,000+ units in stock), this MOSFET offers both prototyping flexibility and volume production scalability.
Key reliability features include:
- 100% RDS(on) testing at elevated temperatures
- Advanced passivation layer for moisture resistance
- Robust lead-frame construction for mechanical stability
- Automotive-grade material qualification
Complementary Design Support
Designers working with the IRFH7084TRPBF benefit from Infineon's comprehensive technical ecosystem. The company provides detailed datasheets, SPICE models, and application notes covering topics such as thermal management, PCB layout optimization, and parallel device operation. These resources enable engineers to maximize the MOSFET's performance potential while minimizing design cycles.
When compared to similar devices in its class, the IRFH7084TRPBF stands out through its combination of low on-resistance, high current capacity, and compact packaging. This specification advantage translates to real-world benefits including reduced board space requirements, lower operating costs, and enhanced system reliability.
Conclusion: Setting New Standards in Power MOSFET Technology
The Infineon IRFH7084TRPBF represents the culmination of decades of power semiconductor innovation. By integrating advanced silicon technology with thermally optimized packaging, this N-Channel MOSFET delivers exceptional performance across diverse applications. Whether implementing high-efficiency power supplies, designing electric vehicle systems, or developing industrial automation equipment, engineers can rely on the IRFH7084TRPBF to meet demanding performance requirements while maintaining design simplicity.
As power density requirements continue to increase across electronics industries, devices like the IRFH7084TRPBF will play a crucial role in enabling next-generation systems that combine high performance with energy efficiency. Its comprehensive feature set, backed by Infineon's industry-leading quality standards, makes it a compelling choice for designers seeking to push the boundaries of modern power electronics.
Tags: HEXFET, Power Electronics, N-Channel MOSFET, Surface Mount Device, Industrial Components