Infineon IRLR8729TRPBF N-Channel MOSFET 30V 58A D-Pak
- Brand: Infineon
- Product Code: IRLR8729TRPBF
- Availability: In Stock
$0.17
- Ex Tax: $0.17
Infineon IRLR8729TRPBF: High-Performance N-Channel MOSFET for Power Electronics
In the realm of power electronics, the Infineon IRLR8729TRPBF stands out as a cutting-edge N-Channel MOSFET engineered to deliver exceptional performance and reliability. With its robust design and advanced HEXFET® technology, this component is ideal for applications requiring high current handling, low on-resistance, and efficient thermal management. Whether you're designing automotive systems, industrial power supplies, or consumer electronics, the IRLR8729TRPBF offers the versatility and durability needed to meet modern engineering challenges.
Key Specifications and Technical Excellence
Built with Infineon's proven MOSFET (Metal Oxide) technology, the IRLR8729TRPBF boasts a drain-to-source voltage (Vdss) of 30V and a continuous drain current of 58A at 25°C. Its low Rds(on) of 8.9mΩ at 25A and 10V gate-source voltage ensures minimal power loss, making it an energy-efficient choice for high-frequency switching applications. The device's gate charge (Qg) of 16nC at 4.5V further enhances its switching speed, reducing operational latency and improving overall system efficiency.
| Parameter | Value |
|---|---|
| Drain to Source Voltage (Vdss) | 30 V |
| Continuous Drain Current (Id) | 58A (Tc) |
| Rds(on) Max @ 25A, 10V | 8.9mΩ |
| Gate Charge (Qg) | 16 nC @ 4.5V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
Design Flexibility and Industrial Applications
The IRLR8729TRPBF's surface-mount D-Pak package (TO-252-3) simplifies integration into compact PCB designs while maintaining excellent thermal dissipation. Its ±20V gate-source voltage tolerance provides added robustness against voltage spikes, ensuring long-term reliability in harsh environments. This MOSFET excels in automotive electronics, motor control systems, power inverters, and battery management solutions. Its ability to operate across a wide temperature range (-55°C to 175°C) makes it suitable for extreme industrial and automotive conditions.
Engineers appreciate the device's optimized input capacitance (1350pF at 15V) and low threshold voltage (2.35V @ 25µA), which contribute to reduced driver losses and improved system responsiveness. The component's tape-and-reel packaging format supports automated assembly processes, streamlining large-scale manufacturing workflows.
As a 'Last Time Buy' product, the IRLR8729TRPBF remains a benchmark for power MOSFET performance in its class. Its combination of high current capability, low on-resistance, and rugged design ensures continued relevance in next-generation power electronics. When reliability, efficiency, and thermal performance are critical, this Infineon HEXFET® device delivers the engineering excellence professionals expect from a global semiconductor leader.
Tags: Power Electronics, Automotive MOSFET, High Current Transistor, Surface Mount FET, Infineon HEXFET®