Infineon IRLR3705ZPBF MOSFET N-Channel 55V 42A DPAK Transistor
- Brand: Infineon
- Product Code: IRLR3705ZPBF
- Availability: In Stock
$0.40
- Ex Tax: $0.40
High-Performance Power MOSFET: Infineon IRLR3705ZPBF
The Infineon IRLR3705ZPBF represents a benchmark in power MOSFET technology, designed to deliver exceptional efficiency and reliability in demanding electronic applications. As a member of Infineon's HEXFET® family, this N-Channel MOSFET combines advanced silicon technology with robust packaging to meet the needs of modern power management systems. While marked as discontinued at Digi-Key, its legacy specifications continue to inform design choices across industrial, automotive, and consumer electronics sectors.
Technical Excellence in Power Control
Engineered for high-current applications, the IRLR3705ZPBF demonstrates impressive electrical characteristics. Its 55V drain-source voltage rating makes it suitable for battery-powered systems and mid-range voltage applications, while the 42A continuous drain current (measured at case temperature) enables handling substantial power loads without thermal derating. The device's exceptionally low RDS(on) of just 8mΩ at 10V gate-source voltage minimizes conduction losses, resulting in cooler operation and improved system efficiency.
Key performance metrics include:
| Parameter | Specification |
|---|---|
| Max Drain-Source Voltage | 55V |
| Continuous Drain Current | 42A @ 25°C |
| RDS(on) | 8mΩ @ 10V VGS |
| Gate Charge | 66nC @ 5V |
| Operating Temperature | -55°C to 175°C |
Design Flexibility and Thermal Management
The D-Pak surface mount package (TO-252-3) combines compact form factor with effective thermal dissipation. This configuration allows designers to implement the device in space-constrained applications while maintaining thermal stability through proper PCB layout. The ±16V gate-source voltage rating provides additional design margin, ensuring reliable operation even under transient voltage conditions.
Unlike many power MOSFETs requiring complex gate drive circuits, the IRLR3705ZPBF's gate characteristics support direct interfacing with standard logic-level controllers. With a maximum gate threshold voltage of 3V at 250µA, it remains compatible with modern microcontroller outputs while maintaining the benefits of low on-resistance.
Application Versatility
While no longer in active production, the IRLR3705ZPBF's specifications made it ideal for various power conversion applications during its availability. Design engineers commonly specified it for:
- DC-DC converters in telecommunications equipment
- Motor control circuits for industrial automation
- Power management systems in consumer electronics
- Automotive electronics requiring robust switching performance
- Solar inverters and energy storage systems
The device's 130W power dissipation rating (at case temperature) allowed operation in high-power density designs when combined with appropriate heatsinking solutions. Its ability to maintain performance across extreme temperature ranges made it suitable for demanding environments like automotive under-hood applications.
Legacy and Replacement Considerations
As a discontinued component, engineers seeking equivalent performance should consider Infineon's newer MOSFET offerings that maintain similar electrical characteristics while incorporating process improvements. The original datasheet specifications remain valuable for understanding the evolution of power MOSFET technology and guiding replacement selection through parametric searches.
When implementing power MOSFETs in new designs, consider current production alternatives that offer enhanced efficiency, lower gate charge, and improved thermal performance. However, for maintenance of existing systems, the IRLR3705ZPBF's specifications provide essential reference data for component sourcing and circuit analysis.
Tags: Surface Mount Transistor