Infineon IRLB3813PBF HEXFET® MOSFET - N-Channel 30V 260A TO-220AB
- Brand: Infineon
- Product Code: IRLB3813PBF
- Availability: In Stock
$0.38
- Ex Tax: $0.38
Infineon IRLB3813PBF HEXFET® MOSFET: High-Performance Power Solution
The Infineon IRLB3813PBF HEXFET® MOSFET is a cutting-edge power transistor designed for demanding applications requiring high efficiency and reliability. As an N-Channel enhancement mode MOSFET, this device offers exceptional performance in a TO-220AB package, making it ideal for power management systems, motor control circuits, and industrial automation equipment. With its 30V voltage rating and 260A continuous drain current capability, this MOSFET delivers robust power handling in a compact form factor.
Technical Excellence in Power Electronics
At the heart of the IRLB3813PBF's impressive specifications lies its ultra-low on-resistance of just 1.95mΩ at 60A and 10V gate-source voltage. This remarkable RDS(on) value minimizes conduction losses and reduces thermal stress, enabling higher system efficiency. The device's advanced HEXFET® technology ensures superior thermal performance, with a maximum operating temperature of 175°C and a wide operating range from -55°C to accommodate extreme environmental conditions.
Key technical parameters include:
| Parameter | Value |
| Drain-Source Voltage (VDSS) | 30V |
| Continuous Drain Current (ID) | 260A @ 25°C |
| On-Resistance (RDS(on)) | 1.95mΩ @ 60A, 10V |
| Gate Charge (Qg) | 86nC @ 4.5V |
| Power Dissipation | 230W (Tc) |
Industrial-Grade Reliability
Engineered to meet the rigorous demands of industrial and automotive applications, the IRLB3813PBF features ±20V gate-source voltage protection and a robust TO-220AB package that ensures reliable operation in harsh environments. Its 8420pF input capacitance at 15V VDS and 2.35V gate threshold voltage enable efficient switching performance across various power supply configurations. The device maintains consistent performance across its entire operating temperature range, making it suitable for both high-temperature industrial settings and cold environment applications.
This MOSFET's versatility shines in applications such as:
- High-current DC-DC converters
- Motor drive inverters
- Industrial power supplies
- Automotive electrical systems
- Servo motor controllers
Design Advantages
The IRLB3813PBF's through-hole mounting design simplifies integration into existing PCB layouts while maintaining excellent thermal dissipation characteristics. Its HEXFET® power MOSFET technology combines advanced processing techniques with optimized die design to minimize switching losses and improve overall system efficiency. The device's 4.5V/10V drive voltage compatibility ensures seamless interface with standard gate drivers and microcontrollers.
With Infineon's reputation for quality and reliability, this MOSFET delivers:
- Enhanced thermal management
- Reduced conduction losses
- Improved switching performance
- Extended operational lifespan
- Compliance with RoHS standards
Performance Optimization
For optimal performance, designers should consider the following implementation guidelines:
| Parameter | Recommendation |
| Gate Drive Voltage | 10V for minimum RDS(on) |
| PCB Layout | Minimize gate loop area |
| Thermal Management | Use adequate heatsinking |
| Paralleling Devices | Current sharing resistors recommended |
| Operating Frequency | Up to 150kHz with proper cooling |
The IRLB3813PBF's comprehensive feature set and rugged design make it a preferred choice for engineers developing high-power density systems. Its combination of high current capability, low on-resistance, and advanced packaging technology positions it as a leading solution in the power MOSFET market.
Tags: Power Electronics, MOSFET Transistor, Industrial Components, Infineon Parts, TO-220 Devices