Infineon IRFTS9342TRPBF P-Channel MOSFET HEXFET® 30V 5.8A 6-TSOP
- Brand: Infineon
- Product Code: IRFTS9342TRPBF
- Availability: In Stock
$0.11
- Ex Tax: $0.11
Revolutionizing Power Management with Infineon IRFTS9342TRPBF HEXFET® MOSFET
As industries evolve towards smarter energy systems and compact electronic designs, Infineon Technologies continues to lead the charge with its groundbreaking IRFTS9342TRPBF P-Channel MOSFET. This 30V, 5.8A power device represents the perfect synergy between advanced semiconductor engineering and practical application requirements. Designed for engineers who refuse to compromise between performance and efficiency, this HEXFET® component sets new benchmarks in power management solutions.
Key Technical Advantages
At the heart of this MOSFET's exceptional performance lies its remarkably low 40mΩ Rds(on) rating at 10V Vgs. This specification directly translates to reduced conduction losses, making it ideal for high-frequency switching applications where thermal management poses challenges. The device's 30V Vdss rating provides robust protection against voltage spikes commonly encountered in automotive and industrial environments, ensuring long-term reliability even under demanding conditions.
What truly sets the IRFTS9342TRPBF apart is its optimized gate charge characteristic. With a maximum Qg of 12nC at 10V drive voltage, this MOSFET achieves faster switching transitions while maintaining minimal driver power consumption. The 2.4V gate threshold voltage further enhances its compatibility with modern control systems, enabling seamless integration with standard logic-level drivers while maintaining excellent noise immunity.
Parameter | Specification |
---|---|
Drain-Source Voltage | 30V |
Continuous Drain Current | 5.8A |
Rds(on) Max | 40mΩ @ 10V Vgs |
Gate Charge | 12nC |
Operating Temperature | -55°C to 150°C |
Design and Application Flexibility
Housed in a space-saving 6-TSOP (SOT-23-6) surface mount package, this MOSFET opens new possibilities for compact PCB layouts without sacrificing thermal performance. The 2W maximum power dissipation rating at ambient temperature ensures reliable operation in densely populated boards. Its ±20V gate voltage rating provides additional design flexibility, allowing engineers to implement robust gate drive strategies without risking device integrity.
This versatile component finds ideal applications across multiple domains: from automotive systems requiring robust power switching to portable electronics demanding efficient battery management. In server power supplies and telecom infrastructure, its low conduction losses contribute significantly to overall system efficiency. The device's 595pF input capacitance at 25V Vds makes it particularly suitable for high-speed switching converters where minimizing switching losses becomes critical.
Why Choose IRFTS9342TRPBF?
Infineon's HEXFET® technology incorporated in this device delivers superior performance-to-size ratio compared to conventional MOSFET solutions. The active product status and tape & reel packaging ensure consistent supply chain reliability for production environments. Backed by Infineon's industry-leading quality standards, this MOSFET meets the most stringent reliability requirements, including AEC-Q101 automotive qualifications.
Engineers will appreciate the device's 4.5V drive voltage compatibility, which allows optimal performance even in systems with fluctuating power supplies. The 25µA test current for gate threshold voltage guarantees precise switching characteristics across varying operating conditions. When combined with its 150°C maximum junction temperature rating, these features make the IRFTS9342TRPBF a dependable choice for thermal-challenged designs.
Future-Proof Power Solution
As energy efficiency regulations become increasingly stringent, the IRFTS9342TRPBF positions itself as a forward-thinking solution for next-generation power systems. Its performance characteristics align perfectly with the industry's push towards higher switching frequencies and reduced system footprints. Whether designing renewable energy inverters, motor control systems, or advanced battery management solutions, this MOSFET provides the reliability and performance needed to meet evolving technological demands.
For design engineers seeking to optimize their power systems without compromising on quality, the Infineon IRFTS9342TRPBF represents the ideal balance of advanced technology, proven reliability, and application flexibility. Its comprehensive specification sheet details additional features like avalanche energy ratings and short-circuit withstand capabilities that further cement its position as a premium power management component.
Tags: Power Electronics, Automotive Electronics, Surface Mount, Energy Efficiency, MOSFET